Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al<sub>2</sub>O<sub>3 </sub>Insulator

Yuya KITABAYASHI

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[12a-C1-1~10] 6.2 Carbon-based thin films

Thu. Mar 12, 2015 9:00 AM - 11:45 AM C1 (6C-104)

9:15 AM - 9:30 AM

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

〇(B)Yuya KITABAYASHI¹, Tetsuya YAMADA¹, Dechen XU¹, Hidetoshi TSUBOI¹, Toshiki SAITO¹, Tatsuya SAITO¹, Daisuke MATSUMURA¹, Atsushi HIRAIWA¹, Hiroshi KAWARADA¹ (1.Waseda Univ.)

Keywords:MOSFET,Power devices,High breakdown voltage

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Presentation information

[12a-C1-1~10] 6.2 Carbon-based thin films

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al2O3 Insulator

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator