[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

△ [12p-A18-11] Critical stress for generation of slip dislocation developing around oxide precipitates in silicon wafers

〇JUN FUJISE¹, BONGGYUN KO¹, KAZUHISA TORIGOE¹, TOSHIAKI ONO¹ (1.SUMCO Corp.)

Keywords:oxide prepicitates,slip dislocation