[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-13] Proximity Gettering of Carbon Cluster Ion Irradiation Silicon Wafers - Gettering Effect on Device Characteristic for CMOS imager -

〇Kazunari Kurita¹, Takeshi Kadono¹, Gon-sub Lee², Jea-Gun Park² (1.SUMCO CORPORATION, 2.Hanyang University)

Keywords:metal impurity gettering in silicon,carbon cluster ion implantation,CCD/CMOS Imager