[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

△ [12p-A18-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers(2) -Hydrogen Diffusion Behavior After Epitaxial Growth-

〇Ryosuke Okuyama¹, Ryo Hirose¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO Corp.)

Keywords:hydrogen diffusion behavior in silicon wafer,Carbon cluster ion irradiation