[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-15] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers - Oxygen Diffusion Behavior after Epitaxial Growth -

〇HIDEHIKO OKUDA¹, RYOSUKE OKUYAMA¹, TAKUROU IWANAGA¹, TAKESHI KADONO¹, RYO HIROSE¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO CORP.)

Keywords:Oxygen diffusion,Cluster ion irradiation