The 62nd JSAP Spring Meeting, 2015

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8 Plasma Electronics » 8.4 Plasma etching

[14a-A27-1~15] 8.4 Plasma etching

Sat. Mar 14, 2015 9:00 AM - 1:00 PM A27 (6A-202)

10:00 AM - 10:15 AM

△ [14a-A27-5] Effects of hydrogen reaction in SiN etching by hydrofluorocarbon (HFC) plasma: molecular dynamics simulation analysis

〇(M1)Yuichi Murakami1, Michiro Isobe1, Keita Miyake1, Masanaga Fukasawa2, Kazunori Nagahata2, Tetsuya Tatsumi2, Satoshi Hamaguchi1 (1.Osaka Univ., 2.Sony Corporation)

Keywords:molecular dynamics,SiN,HFC