Oral presentation

[13a-A35-1~10] 13.9 Optical properties and light-emitting devices

Tue. Sep 13, 2016 9:00 AM - 11:45 AM A35 (303-304)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[13a-A35-1] Synthesis of the Phosphor Materials Using WASSR Method

〇Kenji Toda¹, Takuya Hasegawa¹, Tatsuro Kaneko¹, Sun-woog Kim¹, Miyabi Ishigaki¹, Kazuyoshi Uematsu¹, Mineo Sato¹, Yoshiaki Kudo², Masako Toda², Junko Koide², Usama Bin Humayoun³, Yoon Dae Ho³ (1.Niigata Univ., 2.N-Luminescence Co., 3.Sungkyunkwan Univ.)

9:15 AM - 9:30 AM

[13a-A35-2] Melt Quenching Synthesis of the Phosphor materials

〇Kenji Toda¹, Masaru Muto¹, Takuya Hasegawa¹, Sun-woog Kim¹, Tadashi Ishigaki¹, Kazuyoshi Uematsu¹, Mineo Sato¹ (1.Niigata Univ.)

9:30 AM - 9:45 AM

[13a-A35-3] Photoluminescence of ZnGa₂O₄:Eu³⁺ films affected by crystallinity and oxidization

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

9:45 AM - 10:00 AM

[13a-A35-4] Report on the Development of Hafnium-Chloride-Based Scintillator

〇Shunsuke Kurosawa¹, Shohei Kodama², Akihiro Yamaji², Yuui Yokota¹, Yuji Ohashi², Mototaka Arakawa¹, Kei Kamada^2,3, Akira Yoshikawa^1,2,3 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. IMR, 3.C&A Corp.)

10:00 AM - 10:15 AM

[13a-A35-5] Ionization energy for the 4f electron of a Ce³⁺ ion in GAGG detemined using synchrotron and laser radiation

〇Mamoru Kitaura¹, Junpei Azuma², Kei Hamada³, Manage Ishizaki¹, Akimasa Ohnishi¹, Kazuhiro Hara⁴ (1.Yamagata Univ., 2.Saga UNIV. SLC, 3.Tohoku Univ. NICHe, 4.Shizuoka Univ. RIE)

10:30 AM - 10:45 AM

△ [13a-A35-6] Investigation of the luminescent mechanism for Ce(Ⅲ) doped complexes from (non-)luminescence

〇Atsuya Koizumi¹, Hasegawa Takuya¹, Uematsu Kazuyoshi¹, Itadani Atsushi¹, Toda Kenji¹, Sato Mineo¹, Sakane Genta² (1.Niigata Univ., 2.Okayama Univ. of Science)

10:45 AM - 11:00 AM

△ [13a-A35-7] Crystal Growth of the Eu²⁺-activated Single-crystal Phosphor and Determination of the Doping Site of Luminescent Center

〇Takuya Hasegawa¹, Shota Hasegawa¹, Sun-woog Kim¹, Kazuyoshi Uematsu¹, Kenji Toda¹, Mineo Sato¹ (1.Niigata Univ.)

11:00 AM - 11:15 AM

[13a-A35-8] Broadband-sensitive upconverters for crystalline silicon solar cells (II)

〇Yasuhiko Takeda¹, Mizuno Shintaro¹, Luitel Hom Nath¹, Yamanaka Ken-ichi¹, Tani Toshihiko¹ (1.Toyota Central L&D Labs.)

11:15 AM - 11:30 AM

[13a-A35-9] Composition optimization of Er_xYb_yY_2-x-ySiO₅ crystal and its great sensitization effect

Fumiya Kondo¹, 〇Hideo Isshiki¹ (1.Univ. of Electro-Comm.)

11:30 AM - 11:45 AM

▲ [13a-A35-10] Optical Absorption of Porous Silicon during Dissolution in HF Investigated by Photoconduction

〇Bernard Gelloz¹, Kazuki Ichimura², Eiichi Kondoh², Lianhua Jin² (1.Nagoya Univ., 2.Yamanashi Univ.)

Oral presentation

[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

Tue. Sep 13, 2016 1:15 PM - 5:15 PM A35 (303-304)

Hiroko Kominami(Shizuoka Univ.), Yasushi Nanai(Nihon Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[13p-A35-1] Dimerized emission centers in GaN:Eu red LED: Eu-Eu bonding states evaluation using harmonic-content analysis

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

1:30 PM - 1:45 PM

△ [13p-A35-2] Quantitative analysis on energy transfer process for Eu luminescent centers in Eu-doped GaN

〇(D)Tomohiro Inaba¹, Takanori Kojima¹, Genki Yamashita², Masaaki Ahida², Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Graduate School of Engineering Science, Osaka Univ.)

1:45 PM - 2:00 PM

[13p-A35-3] Investigation on energy transfer process in Eu-doped GaN
by two-wavelength excited photoluminescence measurements

〇Hiroaki Kogame¹, Takanori Kojima¹, Atsusi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[13p-A35-4] Emission enhancement of Eu-doped GaN by multiple quantum blocking layer

〇Tomoya Yamada¹, Tomohiro Inaba¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

[13p-A35-5] Control of valence states of Eu ion in GaN and magnetism

〇Takumi Nunokawa¹, Yusuke Miyata², Takahiro Sakurai³, Norifumi Fujimura², Hitoshi Ohta³, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.Kobe Univ.)

2:30 PM - 2:45 PM

[13p-A35-6] High-Q photonic crystal double-heterostrcture nanocavity with Er,O-codoped GaAs for low-threshold lasers

〇(M2)Masayuki Ogawa¹, Natsuki Fujioka¹, Kanji Sakuragi¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

△ [13p-A35-7] Carrier density dependence of spin relaxation time in Be-doped InGaAsP bulk (10-300 K)

〇Kizuku Yamada¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Takuya Kamezaki¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS)

3:00 PM - 3:15 PM

△ [13p-A35-8] Spin relaxation in Si doped GaAs grown by VB method

〇Shima Tanigawa¹, Masayuki Iida¹, Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

3:30 PM - 3:45 PM

[13p-A35-9] Photoluminescence properties of β-FeSi₂ films

〇Kensuke Akiyama^1,2, Yoshihisa Matsumoto¹, Hiroshi Funakubo² (1.Kanagawa Ind. Tech. Cen., 2.Tokyo Inst.Tech.)

3:45 PM - 4:00 PM

[13p-A35-10] Improved thermos-stability of (NH₄)₂SiF₆ fluorescent microparticles by phosphorus-doping

〇(M2)Aoi Tokiwa¹, Keisuke Sato¹, Kenji Hirakuri¹ (1.Tokyo Denki Univ.)

4:00 PM - 4:15 PM

[13p-A35-11] Fabrication and Ultraviolet Luminescence of Gd³⁺ Doped Perovskite-type Oxide Thin Film EL Devices Using Different Substrates

〇Yuhei Shimizu¹, Kazushige Ueda¹ (1.Kyushu Inst. Tech.)

4:15 PM - 4:30 PM

[13p-A35-12] ZnS:Cu EL phosphors synthesized using nano particles as starting materials

〇Shohei Ueda¹, Tadashi Ishigaki¹, Koichi Wani², Takafumi Otoyama³, Yoshiaki Nakazaki³, Koutoku Ohmi¹ (1.Tottori Univ., 2.Tazmo Co., Ltd., 3.Nano Cube Japan Co., Ltd.)

4:30 PM - 4:45 PM

[13p-A35-13] Electroluminescence from Multiply-Stacked Structures Consisting of Si Quantum Dots with Ge Core and Si Quantum Dots

〇Daichi Takeuchi^1,2, Kentaro Yamada¹, Katsunori Makihara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.JSPS Research Fellow)

4:45 PM - 5:00 PM

[13p-A35-14] Electric-field dependence of spin states in InGaAs-based coupled structures of quantum dots with quantum wells

〇Yuto Akei¹, Junichi Takayama¹, Kazuki Takeishi¹, Kodai Itabashi¹, Masayuki Urabe¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

5:00 PM - 5:15 PM

[13p-A35-15] A Study on the Robustness and the Decomposition Mechanism of Encapsulation Resins Applying to Deep Ultra Violet LEDs

〇Yosuke Nagasawa¹, Akira Hirano¹, Ko Aosaki², Masamichi Ipponmatsu¹, Hiroshi Amano³, Isamu Akasaki⁴ (1.UV Craftory CO., Ltd., 2.Asahi Glass CO., Ltd., 3.Nogoya University, 4.Meijo University)

Oral presentation

[14a-A35-1~10] 13.9 Optical properties and light-emitting devices

Wed. Sep 14, 2016 9:00 AM - 11:45 AM A35 (303-304)

Takanori Kojima(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[14a-A35-1] Synthesis and evaluation of ZnTiF₆:Mn⁴ red phosphor

〇(M2)Shono Sakurai¹, Rhosuke Hoshino¹, Toshihiro Nakamura¹, Sadao Adachi¹ (1.Gunma Univ.)

9:15 AM - 9:30 AM

[14a-A35-2] Synthesis and evaluation of Rb₂XF₆:Mn⁴⁺ ( X = Si, Ge, Ti ) red phosphor

〇(M2)Shono Sakurai¹, Toshihiro Nakamura¹, Sadao Adachi¹ (1.Gunma Univ.)

9:30 AM - 9:45 AM

[14a-A35-3] Preparation and Luminescence Properties of M^I₂M^IVF₆:Mn⁴⁺ Phosphors

〇Ken-ichi Machida¹, Yuko Takahama¹, Hiromasa Hanzawa¹ (1.Osaka Univ.)

9:45 AM - 10:00 AM

[14a-A35-4] Synthesis of the Red-emitting Oxide Phosphor with Mn⁴⁺ Activator

〇Takuya Hasegawa¹, Sun-woog Kim¹, Kazuyoshi Uematsu¹, Kenji Toda¹, Mineo Sato¹ (1.Niigata Univ.)

10:15 AM - 10:30 AM

△ [14a-A35-5] Photoluminescence property of red light excitable Ca₃B₂N₄:Eu²⁺ phosphor

〇(M2)Ryota Yamanashi¹, Takuya Hasegawa¹, Sun-Woog Kim¹, Kazuyoshi Uematsu¹, Kenji Toda¹, Mineo Sato¹, Teng-Ming Chen² (1.Niigata Univ., 2.National Chiao Teng Univ.)

10:30 AM - 10:45 AM

[14a-A35-6] Crystal Growth of Nitride Single-crystal Phosphor under High Pressure N₂

〇Takuya Hasegawa¹, Ryota Yamanashi¹, Sun-woog Kim¹, Kazuyoshi Uematsu¹, Kenji Toda¹, Mineo Sato¹ (1.Niigata Univ.)

10:45 AM - 11:00 AM

△ [14a-A35-7] Synthesis, crystal structure and photoluminescence of Ba₅B₂Al₄Si₃₂N₅₂:Eu

〇Fumitaka Yoshimura¹, Hisanori Yamane² (1.Mitsubishi Chemical Gr. Sci. Tech. Res. Center, Inc., 2.IMRM, Tohoku Univ.)

11:00 AM - 11:15 AM

[14a-A35-8] White luminescence from BaSi₇N₁₀:Eu related nitride phosphor (III)

〇Takashi Takeda¹, Shiro Funahashi¹, Rong-Jun Xie¹, Naoto Hirosaki¹ (1.NIMS)

11:15 AM - 11:30 AM

▲ [14a-A35-9] Preparation of CaAlSiN₃:Eu²⁺ Phosphor Ceramics

〇Rong-Jun Xie¹, Shuxing Li², Yujin Cho¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS, 2.SICCAS)

11:30 AM - 11:45 AM

[14a-A35-10] A_1+xB₃₀X₄₀-type Nobel Nitride Phosphor found by Single-Particle-Diagnosis Approach

〇Shiro Funahashi¹, Naoto Hirosaki¹, Takashi Takeda¹, Rong-Jun Xie¹ (1.NIMS)

Oral presentation

[14p-A35-1~12] 13.9 Optical properties and light-emitting devices

Wed. Sep 14, 2016 1:15 PM - 4:30 PM A35 (303-304)

Haruki Fukada(Kanazawa Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[14p-A35-1] [Young Scientist Presentation Award Speech] Ca₁₀(PO₄)₆(OH)₂ : Mn⁵⁺near-infrared nanophosphors by liquid phase synthesis for in vivo bioimaging

〇Wataru Uehara¹, Tadashi Ishigaki¹, Yuki Okamoto¹, Tooru Inagaki^1,2, Tetsuo Honma³, Koutoku Ohmi¹ (1.Tottori Univ., 2.Ube Industries, Ltd., 3.JASRI)

1:30 PM - 1:45 PM

[14p-A35-2] Preparation of the Emissive Nano-scroll by Proton Exchange

〇Kenji Toda¹, Mizuki Watanabe¹, Takuya Hasegawa¹, Sun-woog Kim¹, Kazuyoshi Uematsu¹, Mineo Sato¹ (1.Niigata Univ.)

1:45 PM - 2:00 PM

△ [14p-A35-3] High photostability of fluorescent InP/ZnS quantum dots embedded in TMAS-derived silica

〇(M1)Taichi Watanabe¹, Chikako Wada¹, Yoshiki Iso¹, Tetsuhiko Isobe¹, Hirokazu Sasaki² (1.Keio Univ., 2.SHOEI CHEMICAL INC.)

2:00 PM - 2:15 PM

[14p-A35-4] Color Rendering Property of CuInS₂ Quantum Dot by Irradiating Blue LED

〇Junya Maki¹, Takeshi Fukuda¹, Norihiko Kamata¹, Zentaro Honda¹ (1.Saitama Univ.)

2:15 PM - 2:30 PM

△ [14p-A35-5] Synthesis and characterization of (Y,Gd)₂O₃:Yb³⁺,Er³⁺upconversion fluorescent nanosheets

〇Yoshiki Iso¹, Jo Sato¹, Tetsuhiko Isobe¹, Takashi Jin², Yoshichika Yoshioka³ (1.Keio Univ., 2.RIKEN, 3.Osaka Univ.)

2:45 PM - 3:00 PM

[14p-A35-6] Nanocomposite phosphor

〇Takeshi Iwasaki¹, Yu Shinomiya¹, Hisayoshi Daicho¹, Akitoshi Nakano², Hiroshi Sawa², Satoru Matsuishi³, Hideo Hosono³ (1.koito Manufacturing, 2.Nagoya Univ., 3.Tokyo Tech.)

3:00 PM - 3:15 PM

[14p-A35-7] Photoluminescence in RE-Doped Fluoroborate Glasses and Nanocrystallized Glasses

〇Kenji Shinozaki¹, Tomoko Akai¹, Tsuyoshi Honma², Takayuki Komatsu² (1.AIST, 2.Nagaoka Univ. Tech)

3:15 PM - 3:30 PM

[14p-A35-8] Photoluminescence from Cerium Ions Doped in Silica Grass Prepared with Sol-Gel Technique

〇(B)Seika Tokumitsu¹, Yukon Murakami¹, Yutaka Kawabe¹ (1.CIST)

3:30 PM - 3:45 PM

△ [14p-A35-9] Near-infrared luminescence properties of bismuth-doped silicon oxynitride thin films

〇Takuya Kojima¹, Takafumi Morioka¹, Minoru Fujii¹ (1.Kobe Univ.)

3:45 PM - 4:00 PM

[14p-A35-10] Solubility limit and luminescence properties of Tb³⁺ ions in Al₂O₃

〇(M1C)yuya oonisi¹, Toshihiro Nakamura¹, Sadao Adachi¹ (1.Grad. School Sci. Eng., Gunma Univ.)

4:00 PM - 4:15 PM

[14p-A35-11] Synthesis and photoluminescence properties of Tb₃Al₅O₁₂ garnet

〇(M1C)yuya oonisi¹, Toshihiro Nakamura¹, Sadao Adachi¹ (1.Grad. School Sci. Eng., Gunma Univ.)

4:15 PM - 4:30 PM

[14p-A35-12] Synthesis and characterization of Tb₃Al₅O₁₂:Ce³⁺ yellow-emitting phosphor

〇(M1C)yuya oonisi¹, Toshihiro Nakamura¹, Sadao Adachi¹ (1.Grad. School Sci. Eng., Gunma Univ.)

Poster presentation

[15p-P10-1~21] 13.9 Optical properties and light-emitting devices

Thu. Sep 15, 2016 1:30 PM - 3:30 PM P10 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[15p-P10-1] Annealing temperature dependence of up-conversion in Yb³⁺/Er³⁺ co-doped Zn₂TiO₄.

〇Toshihiro Nonaka¹, Keito Oyama¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[15p-P10-2] Up- and Down-conversion characteristics of Gd₂O₃: Er³⁺, Yb³⁺

〇masashi hanioka¹, hiroaki samata¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[15p-P10-3] Hydrothermal synthesis of wavelength conversion nanoparticles of ZnSe:Mn/ZnS

〇Tomomi Takagi¹, Taichi Taniguchi², Susumu Sobue¹, Shoichi Kawai¹, Jun Hasegawa¹, Kim DaeGwi² (1.DENSO CORPORATION, 2.Dept. Appl. Phys., Osaka City University)

1:30 PM - 3:30 PM

[15p-P10-4] Measurment of photovoltaic cell with hydrothermal synthesis of wavelength conversion nanoparticles of ZnSeS:Mn

〇Shoichi Kawai¹, Takagi Tomomi¹, Taniguchi Taichi², Sobue Susumu¹, Hasegawa Jun¹, Kim DaeGwi² (1.DENSO Co., 2.Osaka City Univ.)

1:30 PM - 3:30 PM

[15p-P10-5] The effect of co-doped ions on afterglow properties in Y₃GaO₆:Eu³⁺

〇(D)Takuro Dazai¹, Shintaro Yasui¹, Tomoyasu Taniyama¹, Mitsuru Itoh¹ (1.Tokyo Institute of Technology)

1:30 PM - 3:30 PM

[15p-P10-6] Time-resolved Photoluminescence Properties of (La,Ce,Y)₆Si₄S₁₇ Phosphors

〇Yasushi Nanai^1,2, Hayato Kamioka¹, Tsuyoshi Okuno² (1.Nihon Univ., 2.The Univ. of Electro-Communications)

1:30 PM - 3:30 PM

[15p-P10-7] Luminescent Properties of Transition Metal doped SrTiO₃:Pr Phosphor Synthesized by Sol-Gel Method

〇(M1)Tatsuyuki Tahiro¹, Kento Akao¹, HIroko Kominami¹, Yoichiro Nakanishi¹, Kazuhiko Hara¹, Oleg.M. Marchylo² (1.Shizuoka Univ., 2.VE.Lashkaryov Inst.)

1:30 PM - 3:30 PM

[15p-P10-8] Luminescent properties and particle-size control of Eu doped Sr₄Al₁₄O₂₅ phosphors

〇Keisuke Hada¹, Hiroko Kominami¹, Kazuhiko Hara², Yoichiro Nakanishi² (1.Grad. School of Integrated Sci. & Technol., Shizuoka Univ., 2.Res. Inst. Electron., Shizuoka Univ)

1:30 PM - 3:30 PM

[15p-P10-9] Radiative and Non-Radiative Transitions in Y₂O₃-Based Oxide Phosphors

〇Kousuke Sakuma¹, Yuta Shimooki¹, Kouhei Shimabayashi¹, Haruki Fukada¹, Atsushi A. Yamaguchi¹ (1.Kanazawa Inst. of Tech.)

1:30 PM - 3:30 PM

[15p-P10-10] Energy Transfer Processes in YVO₄:Bi, Ln(Ln=Sm,Eu,Dy,Er) Phosphor

Takuma Ikarashi¹, Kunio Yubuta², Toetsu Shishido², Naotaka Uchitomi¹, 〇Ariyuki Kato¹ (1.Nagaoka Univ. of Tech., 2.Inst. Mater. Res., Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-P10-11] Control of luminescence spectra of Tm₂O₃-doped oxide glasses for NIR wideband light-source

〇(M1)Seiya Nishimura¹, Shingo Fuchi¹, Yoshikazu Takeda² (1.Aogaku Univ., 2.Aichi Science & technology foundation)

1:30 PM - 3:30 PM

[15p-P10-12] Preparation of ZnAl₂O₄ Thin Film by α-Al₂O₃and ZnO Multilayer Film Thermal Diffusion.

〇Taro Ito¹, Hiroko Kominami¹, Kazuhiko Hara², Yoichiro Nakanishi² (1.Grad. School of Integrated Sci. & Technol., Shizuoka Univ., 2.Res. Inst. Electron., Shizuoka Univ.)

1:30 PM - 3:30 PM

[15p-P10-13] Crystal growth and optical properties of ZnIn₂Se₄semiconductor

〇Tomoki Yamane¹, Shunji Ozaki¹ (1.Gunma Univ)

1:30 PM - 3:30 PM

[15p-P10-14] Crystal growth and optical anisotropy of AgGaS₂ semiconductor

〇Tatsuya Kaneko¹, Shunji Ozaki¹ (1.Gunma Univ.)

1:30 PM - 3:30 PM

[15p-P10-15] Influence of thickness of organic layers on optical properties of organic-inorganic perovskite compounds

〇Daiki Tajima¹, Masanori Koshimizu¹, Yutaka Fujimoto¹, Keisuke Asai¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-P10-16] Fabrication and optical characterization of CdSe nanoparticles liganded with
π–conjugated Rhodamine molecules

〇Hiroto Ohno¹, Takuma Yahaba¹, Masanori Koshimizu¹, Yutaka Fujimoto¹, Keisuke Asai¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-P10-17] Fabrication of core shell quantum dot films by wet-process and application to light-emitting diodes.

〇(M1)Chisato Konishi¹, Yuto Kakinoki¹, Naoki Ohtani¹ (1.Doshisha Univ.)

1:30 PM - 3:30 PM

[15p-P10-18] Optical characterization of ZnSe/CdSe nanocrystals coupled with Aminoacridone in organic-inorganic excitation resonance

〇(M2)TAKUMA YAHABA¹, Hiroto Ono¹, Masanori Koshimizu¹, Yutaka Fujimoto¹, Keisuke Asai¹ (1.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-P10-19] Development of a New Method for Multiple Exciton Extraction from Colloidal Semiconductor Quantum Dots

〇Masaru Oda¹, Hibiki Saigyo², Hiroto Akagi¹ (1.Grad. Sch. of Eng., Kyushu Inst. of Tech., 2.Faculty of Eng., Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[15p-P10-20] Polarization dependence of two-photon absorption with elliptically and circularly polarized two beams in InP(110)

〇Takaaki Ishijima¹, Masaki Oishi¹, Toshio Matsusue¹, Hiroyuki Bando¹ (1.Chiba Univ.)

1:30 PM - 3:30 PM

[15p-P10-21] Study on the measurement conditions of the nonlinear refractive index in InP thick film using Z-scan technique

〇YuuKi Ikeda¹, Tomoya Mitani¹, Masaki Oishi¹, Toshio Matsusue¹, Hiroyuki Bando¹ (1.Chiba Univ.)

Sessions

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[13a-A35-1~10] 13.9 Optical properties and light-emitting devices

△ [13a-A35-6] Investigation of the luminescent mechanism for Ce(Ⅲ) doped complexes from (non-)luminescence

△ [13a-A35-7] Crystal Growth of the Eu2+-activated Single-crystal Phosphor and Determination of the Doping Site of Luminescent Center

▲ [13a-A35-10] Optical Absorption of Porous Silicon during Dissolution in HF Investigated by Photoconduction

[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

△ [13p-A35-2] Quantitative analysis on energy transfer process for Eu luminescent centers in Eu-doped GaN

△ [13p-A35-7] Carrier density dependence of spin relaxation time in Be-doped InGaAsP bulk (10-300 K)

△ [13p-A35-8] Spin relaxation in Si doped GaAs grown by VB method

[14a-A35-1~10] 13.9 Optical properties and light-emitting devices

△ [14a-A35-5] Photoluminescence property of red light excitable Ca3B2N4:Eu2+ phosphor

△ [14a-A35-7] Synthesis, crystal structure and photoluminescence of Ba5B2Al4Si32N52:Eu

▲ [14a-A35-9] Preparation of CaAlSiN3:Eu2+ Phosphor Ceramics

[14p-A35-1~12] 13.9 Optical properties and light-emitting devices

△ [14p-A35-3] High photostability of fluorescent InP/ZnS quantum dots embedded in TMAS-derived silica

△ [14p-A35-5] Synthesis and characterization of (Y,Gd)2O3:Yb3+,Er3+upconversion fluorescent nanosheets

△ [14p-A35-9] Near-infrared luminescence properties of bismuth-doped silicon oxynitride thin films

[15p-P10-1~21] 13.9 Optical properties and light-emitting devices

Authentication

△ [13a-A35-7] Crystal Growth of the Eu²⁺-activated Single-crystal Phosphor and Determination of the Doping Site of Luminescent Center

△ [14a-A35-5] Photoluminescence property of red light excitable Ca₃B₂N₄:Eu²⁺ phosphor

△ [14a-A35-7] Synthesis, crystal structure and photoluminescence of Ba₅B₂Al₄Si₃₂N₅₂:Eu

▲ [14a-A35-9] Preparation of CaAlSiN₃:Eu²⁺ Phosphor Ceramics

△ [14p-A35-5] Synthesis and characterization of (Y,Gd)₂O₃:Yb³⁺,Er³⁺upconversion fluorescent nanosheets