[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

▲ [15a-B1-2] Characterization of Channel Temperature in Ga₂O₃ MOSFETs

〇ManHoi Wong¹, Yoji Morikawa², Kohei Sasaki^3,1, Akito Kuramata³, Shigenobu Yamakoshi³, Masataka Higashiwaki¹ (1.NICT, 2.Silvaco Japan, 3.Tamura Corp.)

Keywords:Ga2O3, channel temperature, thermal resistance

Knowledge of the channel temperature (T_ch) in high power Ga₂O₃ metal-oxide-semiconductor field effect transistors (MOSFETs) is essential for device reliability studies. In this work, the T_ch and thermal resistance (R_th) of field-plated β-Ga₂O₃ (010) MOSFETs were systematically determined through temperature-dependent electrical measurements complemented by 2-D device simulations that incorporated experimental Ga₂O₃ thermal parameters. A large R_th was extracted, which highlights the importance of thermal analysis for understanding the degradation mechanisms of Ga₂O₃ devices.