09:15 〜 09:30
▲ [15a-B1-2] Characterization of Channel Temperature in Ga2O3 MOSFETs
キーワード:Ga2O3, channel temperature, thermal resistance
Knowledge of the channel temperature (Tch) in high power Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) is essential for device reliability studies. In this work, the Tch and thermal resistance (Rth) of field-plated β-Ga2O3 (010) MOSFETs were systematically determined through temperature-dependent electrical measurements complemented by 2-D device simulations that incorporated experimental Ga2O3 thermal parameters. A large Rth was extracted, which highlights the importance of thermal analysis for understanding the degradation mechanisms of Ga2O3 devices.