The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Thu. Sep 15, 2016 9:00 AM - 12:15 PM B10 (Exhibition Hall)

Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus)

12:00 PM - 12:15 PM

[15a-B10-13] High Mechanical Strength in Gold Films Electroplated with Supercritical Carbon Dioxide for MEMS Applications

〇(D)Haochun Tang1, Chun-Yi Chen1,2, Tso-Fu Mark Chang1,2, Daisuke Yamane1,2, Katsuyuki Machida1,2,3, Kazuya Masu1,2, Masato Sone1,2 (1.IIR Tokyo Tech, 2.CREST JST, 3.NTT AT Corp.)

Keywords:Gold, Electroplating, Supercritical carbon dioxide

Recently, electroplated gold films have attracted much attention because of their desirable properties for micro-electrical-mechanical systems (MEMS) devices. However, it is known that mechanical strength of gold materials is relatively low when compared with the other metallic materials, which is always a concern in practical MEMS applications especially for the movable components. On the other hand, an alternative electroplating (EP) method employing supercritical carbon dioxide (scCO2) in film deposition was proposed to be effective on the grain refinement as demonstrated in electroplating of Ni and Cu. Based on the Hall-Petch relationship, finer grain would result in strengthening of the metallic materials. It is expected that the mechanical strength of electroplated gold could be enhanced by employing scCO2 in the EP process.