2016年 第77回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[15a-B10-1~13] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

2016年9月15日(木) 09:00 〜 12:15 B10 (展示控室1)

葉 文昌(島根大)、岡田 竜弥(琉球大)

12:00 〜 12:15

[15a-B10-13] High Mechanical Strength in Gold Films Electroplated with Supercritical Carbon Dioxide for MEMS Applications

〇(D)Haochun Tang1、Chun-Yi Chen1,2、Tso-Fu Mark Chang1,2、Daisuke Yamane1,2、Katsuyuki Machida1,2,3、Kazuya Masu1,2、Masato Sone1,2 (1.IIR Tokyo Tech、2.CREST JST、3.NTT AT Corp.)

キーワード:Gold, Electroplating, Supercritical carbon dioxide

Recently, electroplated gold films have attracted much attention because of their desirable properties for micro-electrical-mechanical systems (MEMS) devices. However, it is known that mechanical strength of gold materials is relatively low when compared with the other metallic materials, which is always a concern in practical MEMS applications especially for the movable components. On the other hand, an alternative electroplating (EP) method employing supercritical carbon dioxide (scCO2) in film deposition was proposed to be effective on the grain refinement as demonstrated in electroplating of Ni and Cu. Based on the Hall-Petch relationship, finer grain would result in strengthening of the metallic materials. It is expected that the mechanical strength of electroplated gold could be enhanced by employing scCO2 in the EP process.