Fabrication and evaluation of liquid silicon vapor deposition-derived crystal silicon thin-film transistor

Daisuke Hishitani; Yasuaki Ishikawa; Hiroshi Ikenoue; Miki Trifunovic; Ryoichi Ishihara; Tatsuya Shimoda; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Thu. Sep 15, 2016 9:00 AM - 12:15 PM B10 (Exhibition Hall)

Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus)

10:30 AM - 10:45 AM

△ [15a-B10-7] Fabrication and evaluation of liquid silicon vapor deposition-derived crystal silicon thin-film transistor

〇Daisuke Hishitani¹, Yasuaki Ishikawa¹, Hiroshi Ikenoue², Miki Trifunovic³, Ryoichi Ishihara³, Tatsuya Shimoda⁴, Yukiharu Uraoka¹ (1.NAIST, 2.Kyushu univ., 3.TU Delft, 4.JAIST)

Keywords:Liquid Silicon, Thin Film Transistor, Crystal glowth

液体シリコンの蒸着法による非晶質シリコン薄膜の形成およびμ-czochralski法によるシリコン薄膜の単結晶化を用い，プロセス最高温度350℃で結晶シリコン薄膜トランジスタの作製を行った．作製したn型Si-TFTは良好なスイッチング特性(On/Off比: 10⁸程度)を示し，電子移動度は325cm²/Vsであった．