Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(1)<br />-The influence of oxygen concentration in implanted region on gettering of metallic impurities-

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

Thu. Sep 15, 2016 1:15 PM - 6:45 PM A23 (201B)

Takahiro Maeta(Global Wafers Japan), Takuto Kojima(Meiji Univ.), Yutaka Ohno(Tohoku Univ.)

2:15 PM - 2:30 PM

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:silicon wafer, carbon cluster ion implantation, proximity gettering