[15p-B10-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15p-B10-11] Decomposition of SiCl₄ at atmospheric pressure using hydrogen radical
generated by thermal filament method

〇Yuji Okamoto^1,2, Daiki Tsutsumi³, Takamasa Ishigaki³, Fatima Zohra Dahmani⁴, Masatomo Sumiya² (1.Tsukuba Univ., 2.NIMS, 3.Hosei Univ., 4.USTO-MB.)

Keywords:high purity silicon, hydrogen radical, siemens method

A high purity Si, which is a material of Si solar cells, is produced by reduction of SiHCl₃ with hydrogen gas (Siemens method). The problem of Siemens method is the low yield of Si in the process. We have tried to improve the yield by using hydrogen radical instead of hydrogen gas. In this study, we generated the hydrogen radical by the thermal filament method and measured its density. We also attempted to synthesize Si by reducing chlorosilane-type material gas with the hydrogen radical.