The 77th JSAP Autumn Meeting, 2016

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15p-B10-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Thu. Sep 15, 2016 1:45 PM - 6:30 PM B10 (Exhibition Hall)

Minoru Sasaki(Toyota Tech. Inst.)

5:00 PM - 5:15 PM

[15p-B10-12] Rate Theory of Silicon Epitaxial Growth in SiHCl3-SiHx-H2 system

〇Toru Watanabe1, Hitoshi Habuka1, Ayumi Saito1 (1.Yokohama Nat. Univ.)

Keywords:Silicon epitaxy, SiHx, Surface chemical process

The rate equation of silicon epitaxial growth rate in SiHCl3-SiHx-H2 system was obtained taking into account the elemental chemical reactions occurring at the surface in a steady state. The growth rate behavior predicted by the equation agreed with the measurement. The surface chemical reactions are considered to help exceeding the saturation of silicon epitaxial growth rate in SiHCl3-H2 system.