[15p-B9-1~17] 13.3 Insulator technology

[15p-B9-4] Influence of Impurity Oxygen in Metal TiN on Formation of Ferroelectric Hf_0.5Zr_0.5O₂

〇Hiroyuki Ota¹, Shinji Migita¹, Estuo Kurosawa¹, Akira Toriumi² (1.AIST, 2.The Univ. of Tokyo)

Keywords:ferroelectric, HfO2, Hf0.5Zr0.5O2, TiN

In this paper, influence of impurity oxygen in metal TiN on formation of ferroelectric Hf_0.5Zr_0.5O₂ is studied. Excellent ferroelectric C-V curves are obtained in the MFM capacitors with pure metal TiN whereas those with metal TN(O) in which some amount of oxygen atoms are incorporated (O/N = 0.5) would not show the ferroelectricity. Those results indicate that the ferroelectricity in Hf_0.5Zr_0.5O₂ is strongly influenced by oxygen-diffusion between the metal TiN and Hf_0.5Zr_0.5O₂ layers during thermal annealing process for crystallization.