[15p-P2-1~15] 6.2 Carbon-based thin films

[15p-P2-12] Fabrication of boron-doped diamond FET structure using ferroelectric gate insulator

〇RYOTA KARAYA¹, Hiroki Furuichi¹, Ikki Baba¹, Yosuke Mori¹, Ryo Yoshida¹, Takashi Nakajima², Norio Tokuda¹, Takeshi Kawae¹ (1.Kanazawa Univ., 2.Tokyo Univ. of Sci.)

Keywords:diamond, FET, Ferroelectric