The 77th JSAP Autumn Meeting, 2016

Presentation information

Print

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[16a-P4-1~8] 13.3 Insulator technology

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P4 (Exhibition Hall)

9:30 AM - 11:30 AM

[16a-P4-6] Consideration of Fabrication Method in Si-MOS Interface Layer by Chemical Oxidation

〇Yusuke Sugino1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri & Tech)

Keywords:Interface Layer, SiO2, Chemical Oxidation