[16a-P4-1~8] 13.3 Insulator technology

[16a-P4-8] Fabrication of AlO_x/GeO_x/Ge Gate Stack Structure by Two Step Thermal Treatment

〇Akira Heya¹, Naoki Yoshioka¹, Naoto Matsuo¹ (1.Univ. of Hyogo)

Keywords:gate insulator, Al2O3/GeO2/Ge gate stack structure, two-step-thermal treatment

Ge film is one of the attractive materials for next generation semiconductor devices because the Ge has a high mobility. In this study, we tried to fabricate of the Al₂O₃/GeO₂/Ge film/quartz substrate using a conventional furnace. The reaction at interface and electrical property were investigated. It is found that the AlO_x/GeO_x/Ge gate stack structure can be obtained by two-step-thermal treatment.