9:30 AM - 11:30 AM
[16a-P4-8] Fabrication of AlOx/GeOx/Ge Gate Stack Structure by Two Step Thermal Treatment
Keywords:gate insulator, Al2O3/GeO2/Ge gate stack structure, two-step-thermal treatment
Ge film is one of the attractive materials for next generation semiconductor devices because the Ge has a high mobility. In this study, we tried to fabricate of the Al2O3/GeO2/Ge film/quartz substrate using a conventional furnace. The reaction at interface and electrical property were investigated. It is found that the AlOx/GeOx/Ge gate stack structure can be obtained by two-step-thermal treatment.