Investigation of Effective Carrier Mobility in Minimal SOI-MOSFETs

Yongxun Liu; Sommawan Khumpuang; Masayoshi Nagao; Takashi Matsukawa; Shiro Hara

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16p-B10-1~12] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Fri. Sep 16, 2016 1:45 PM - 5:00 PM B10 (Exhibition Hall)

Minoru Sasaki(Toyota Tech. Inst.), Kuniyuki Kakushima(Titech)

4:30 PM - 4:45 PM

[16p-B10-11] Investigation of Effective Carrier Mobility in Minimal SOI-MOSFETs

〇Yongxun Liu¹, Sommawan Khumpuang¹, Masayoshi Nagao¹, Takashi Matsukawa¹, Shiro Hara¹ (1.AIST)

Keywords:Minimal, Effective mobility, Split CV

Last time, we reported the electrical characteristics of PVD-TiN gate SOI-CMOS integrated circuits fabricated by using minimal-fab and mega-fab hybrid process. This time, we fabricate large area SOI-MOSFETs by using the same hybrid process, and investigate the effective carrier mobility using split CV method.