The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

4 JSAP-OSA Joint Symposia 2016 » 4.4 Opto-electronics

[16p-C301-1~12] 4.4 Opto-electronics

Fri. Sep 16, 2016 1:30 PM - 5:00 PM C301 (Nikko Tsuru)

Takeo Maruyama(Kanazawa Univ.), Sze Set(Univ. of Tokyo)

1:45 PM - 2:15 PM

[16p-C301-2] [JSAP-OSA Joint Symposia 2016 Invited Talk] High-Power and Ultrafast Photodidoes at THz Regime

Jin-Wei Shi1,2 (1.Dept. of EE, National Central Univ., Taiwan, 2.Dept. of ECE, Univ. of California Santa Barbara, CA)

Keywords:Photodiodes

Commanding the full electromagnetic (EM) spectrum (near 1 MHz to around 0.3 THz), which includes generation, modulation, wireless transmission, and detection by use of photonic approaches, plays an important role in modern electronic warfare, THz bandwidth measurement instruments (network analyzer), and the next-generation of wireless communication at the millimeter-wave or THz wave bands. An ultra-fast photodiodes (PDs) serves as the key complements in this system. In this paper, we review our recent work about near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) at THz regime.