Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

Sun. Mar 20, 2016 1:45 PM - 6:30 PM S422 (S4)

Keiji Ikeda(TOSHIBA), Jiro Ida(Kanazawa Inst. of Tech.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[20p-S422-1] Improving electrical characteristics of sputtered MoS₂ film by post-annealing in forming gas atmosphere

〇Junichi Shimizu¹, Takumi Ohashi¹, Kentaro Matsuura¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

[20p-S422-2] Carrier density mitigation of MoS₂ film by S/Mo ratio increment

〇Takumi Ohashi¹, Kentaro Matsuura¹, Seiya Ishihara², Yusuke Hibino², Naomi Sawamoto², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech, 2.Meiji Univ.)

2:15 PM - 2:30 PM

[20p-S422-3] Electrical characterization of poly-InSb MOSFET for monolithic 3DIC

〇(M1)Masahiro Takahashi^1,2, Sachie Fujikawa¹, Hiroki Fujishiro¹, Toshifumi Irisawa², Junji Tominaga², Tatsuro Maeda^1,2 (1.TUS, 2.AIST)

2:30 PM - 2:45 PM

[20p-S422-4] A Design Study of CMOS Inverters with Stacked Transistors by Device Simulation

〇Junichi Hattori¹, Koichi Fukuda¹, Hiroyuki Ota¹, Toshifumi Irisawa¹, Tatsuro Maeda¹ (1.AIST)

2:45 PM - 3:00 PM

[20p-S422-5] Anomalous Interface Phase in the Channel of VO₂ Mott Transistors

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

3:00 PM - 3:15 PM

[20p-S422-6] Study on Steep Slope Switching in SOI-FETs using Negative Capacitance in Ferroelectric HfO₂ Insulators: Importance on Design of BOX Thickness

〇Hiroyuki Ota^1,3, Shinji Migita^1,3, Koichi Fukuda¹, Junichi Hattori¹, Akira Toriumi^2,3 (1.AIST, 2.Univ. of Tokyo, 3.CREST, JST)

3:15 PM - 3:30 PM

[20p-S422-7] Analysis of PN-Body tied SOIMOSFET with SS=35μV/dec

〇Takashi Horii¹, Takahiro Yoshida¹, Yousuke Kuramoto¹, Jiro Ida¹ (1.Kanazawa Inst. of Tech)

3:30 PM - 3:45 PM

[20p-S422-8] Numerical Analysis of discrete dopant effects on Tunnel FET

〇Hidehiro Asai¹, Shinji Migita¹, Junichi Hattori¹, Koichi Fukuda¹, Nobuyuki Sano² (1.AIST, 2.Tsukuba Univ.)

3:45 PM - 4:00 PM

[20p-S422-9] A Study of Parallel Electric-Field Tunnel FET's by TCAD

〇Koichi Fukuda¹, Yukinori Morita¹, Takahiro Mori¹, Wataru Mizubayashi¹, Meishoku Masahara¹, Shinji Migita¹, Hiroyuki Ota¹ (1.AIST)

4:00 PM - 4:15 PM

[20p-S422-10] Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET

〇Wenbo Lin¹, Shinjiro Iwata¹, Koichi Fukuda^1,2, Yasuyuki Miyamoto¹ (1.Tokyo Tech., 2.AIST.)

4:30 PM - 4:45 PM

[20p-S422-11] Fabrication and Evaluation of Ge Tunnel FET with Metal/Ge and n⁺/Ge Contact

〇Keisuke Yamamoto¹, Hayato Okamoto², Dong Wang², Hiroshi Nakashima¹ (1.KASTEC, Kyushu Univ., 2.IGSES, Kyushu Univ.)

4:45 PM - 5:00 PM

[20p-S422-12] Demonstration of GaAsSb/InGaAs vertical tunneling FETs

〇(D)Takahiro Gotow^1,3, Manabu Mitsuhara^2,3, Takuya Hoshi^2,3, Hiroki Sugiyama^2,3, Mitsuru Takenaka^1,3, Shinichi Takagi^1,3 (1.U-Tokyo, 2.NTT, 3.JST CREST)

5:00 PM - 5:15 PM

[20p-S422-13] Performance evaluation of InGaAs TFETs with high-In-content InGaAs Quantum Well

〇DAEHWAN AHN^1,2, MITSURU TAKENAKA^1,2, SHINICHI TAKAGI^1,2 (1.The Univ. of Tokyo, 2.JST CREST)

5:15 PM - 5:30 PM

[20p-S422-14] A tunnel high-electron mobility transistor (t-HEMT)

〇Katsuhiro Tomioka^1,2, Fumiya Ishizaka¹, Junichi Motohisa¹, Takashi Fukui¹ (1.GS-IST, RCIQE, Hokkaido Univ., 2.JST-PRESTO)

5:30 PM - 5:45 PM

[20p-S422-15] Analysis of NBTI Degradation in p-type Tunnel FETs

〇Wataru Mizubayashi¹, Takahiro Mori¹, Koichi Fukuda¹, Yuki Ishikawa¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Yongxun Liu¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Takashi Matsukawa¹, Meishoku Masahara¹, Kazuhiko Endo¹ (1.AIST)

5:45 PM - 6:00 PM

[20p-S422-16] Coupled quantum-dot transport and its microwave response in short-channel tunnel field-effect transistors (TFETs)

〇Satoshi Moriyama¹, Takahiro Mori², Keiji Ono³ (1.NIMS, 2.AIST, 3.RIKEN)

6:00 PM - 6:15 PM

[20p-S422-17] Charge pumping and spin effect in tunnel field-effect transistors (TFETs)

〇Keiji Ono¹, Takahiro Mori², Satoshi Moriyama³ (1.RIKEN, 2.AIST, 3.NIMS)

6:15 PM - 6:30 PM

[20p-S422-18] Stability and Tunneling Current of Isoelectronic Impurity Complexes in Si-TFET; First-principles Study

〇Shota Iizuka¹, Yoshihiro Asayama¹, Akito Nagasawa¹, Takashi Nakayama¹ (1.Chiba Univ.)

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