[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-12] Characterization of W-silicide films composed of W-encapsulating Si clusters deposited using gas-phase reactions of WF₆ with SiH₄

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

Keywords:CVD,Silicide,Metal semiconductor junction

We formed W silicide films composed of WSi_n clusters by using a gas-phase reaction between WF₆ and SiH₄ in a hot-wall reactor. The formed films were amorphous semiconductors with an optical gap of ~0.8–1.5 eV, which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.