The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 1:45 PM - 6:15 PM S423 (S4)

Tomoji Nakamura(Fujitsu Lab.), Kuniyuki Kakushima(Titech)

3:15 PM - 3:30 PM

[19p-S423-7] Precise Control of the Nickelidation Process of Si Nanowire by Ar+ Ion Irradiation

〇(B)Shunsuke Oba1, Shuichiro Hashimoto1, Kohei Takei1, Jing Sun1, Xu Zhang1, Taiyu Xu1, Shuhei Asada1, Toshihiro Usuda1, Kiyoshi Endo1, Motohiro Tomita1,2,3, Hiroki Tokutake3, Ryosuke Imai3, Atsushi Ogura3, Takashi Matsukawa4, Meishoku Masahara4, Takanobu Watanabe1 (1.Waseda Univ., 2.JSPS PD, 3.Meiji Univ., 4.AIST)

Keywords:Silicide,nanowire