The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[19p-W621-1~12] 8.4 Plasma etching

Sat. Mar 19, 2016 2:30 PM - 5:45 PM W621 (W6)

Hisataka Hayashi(TOSHIBA), Koji Eriguchi(Kyoto Univ.)

5:00 PM - 5:15 PM

[19p-W621-10] Electronic properties and dissociation channels of C4F6 molecule

Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ.)

Keywords:semiconductor,etching,C4F6

CF4, C2F6, C3F8, c-C4F8, c-C5F8 and others have been used in dielectric film etching. Recently, C4F6 gas is also used. The dissociation properties of CF4, c-C4F8, and c-C5F8 gases were presented by us. Therefore, we will report the dissociation properties of C4F6 gas, using computational chemistry.