[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(11) Radiation induced intrinsic point defects and their clusters in various crystals

〇Naohisa Inoue^1,6, Yasunori Gotou², Takahide Sugiyama³, Hirofumi Seki⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyuo U. Agri&Tech., 2.Toyota Motor Co., 3.Toyota Central Res. Labs., 4.Toray Research Inc., 5.Systems Engineering Inc., 6.Osaka Pref. U.)

Keywords:silicon single crystal,infrared absorption,radiation induced complex

Radiation induced point defect-light element impurity complexes, basically CiOi, are used widely for lifetime control in power devices for hybrid cars. Recently, not only CZ, but also FZ, CZ-FZ and epi wafers have been examined as candidates. It is known that CiOi behaves differently in crystals from different origin. Behavior of not only dominant complexes in such crystals but also minor groups are quantitatively analyzed by high sensitivity infrared absorption spectroscopy. It is to be noted that the complexes in CiOi-VO-CsO system react only within the system. In the most well established C-rich type samples, CiOi and VO are the dominant complexes and react with each other at above 300oC as CiOi+VO=CsO+O. VO+O=VO2 also takes place and competes with the former reaction. In the C-lean and O-lean samples, CiOi is not the dominant complex and its reaction is controlled by the other dominant reactions.