[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

△ [20p-H113-6] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (6)
- Development study of multi-element molecular ion implantation technique -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO Corp., 2.NISSIN ION EQUIPMENT Corp.)

Keywords:silicon wafer,carbon cluster ion implantation,molecular ion implantation

We reported various characteristics of carbon-cluster ion implanted silicon wafers represented by high gettering capability of metallic impurities.
We believe that these characteristics are able to contribute for improve characteristics of CMOS image sensors.
For characteristics improvement of carbon-cluster ion implanted silicon wafers, we developed new molecular ion implantation technology.
This new technology can implant Carbon, Hydrogen and Oxygen at the same time.
We expect that this new technology can contribute for improve characteristics of CMOS image sensors.