[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

[20p-H113-7] Critical Stress for Generation of Slip Dislocation Developing from Scratches in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO CORPORATION)

Keywords:Silicon,dislocation,strength

For the improvement of device yield, it is important to understand the relationship between critical stress for generation of slip dislocation and scratches on silicon wafer. However, it is not clear. In this study, we reveal the relationship by three-point bending test at high temperature using silicon wafers introduced scratches intentionally.