P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

7:15 PM - 7:30 PM

〇Li-wen SANG¹, kexiong Zhang¹, Masatomo Sumiya¹, Meiyong Liao¹, Yasuo Koide¹ (1.NIMS)

Keywords:field effect transistor