[20p-H121-1~24] 15.4 III-V族窒化物結晶

▼ [20p-H121-23] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

〇SANG Li-wen¹、張 克雄¹、角谷 正友¹、廖 梅勇¹、小出 康夫¹ (1.物材機構)

キーワード：field effect transistor