[20p-S221-1~17] 13.3 絶縁膜技術

▲ [20p-S221-2] Improvement of MOS Interfaces of La₂O₃/InGaAs by Ultra-thin ALD Al₂O₃ Capping Layers

〇(D)張 志宇^1,2、竹中 充^1,2、高木 信一^1,2 (1.東大院工、2.JST-CREST)

キーワード：InGaAs,La2O3,Traps