[20p-S621-1~13] 3.15 シリコンフォトニクス

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

〇Chang Guo-En¹ (1.Nat. Chung Cheng Univ.)

キーワード：Optical gain,GeSn alloys

Ge_1-xSn_x alloys have emerged as a new active material for efficient Si-based lasers. With a Sn composition of 6-10%, Ge_1-xSn_x alloys can become a direct bandgap material to enable efficient electron-hole recombination. Enhanced photoluminescence from GeSn has been recently observed, as well as first demonstration of GeSn lasers at low temperatures. However, the high threshold of the GeSn laser hinders the device from practical applications. To reduce the threshold, research attention has been shifted to low-dimensional GeSn material systems for active materials due to modified density-of-states and better carrier confinements. Here we present a theoretical investigation of optical gain of Ge_1-xSn_x/Ge quantum wells pseudomorphically grown on Ge-on-Si substrates for Si-based lasers.