[21a-S222-1~12] 21.1 Joint Session K

[21a-S222-6] Exciton-LO-Phonon Interaction in β-Ga₂O₃ Crystals

〇Takeyoshi Onuma^1,2, Shingo Saito², Kohei Sasaki^3,2, Ken Goto³, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata³, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Keywords:Gallium Oxide,exciton,phonon

β-Ga₂O₃ has attracted much attention because of its potential use in variety of applications, especially in high-power FETs. In this study, temperature-dependent exciton resonance structures are studied using polarized reflectance measurement. The structures are found to be strongly correlated with the longitudinal optical phonon energies, which are obtained from the IR spectroscopic ellipsometry.