[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-1] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshinobu Narita³, Takehiro Yoshida³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.Sciocs)

Keywords:free-standing GaN substrate,p-n junction diodes