[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-2] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (2) --Effect of surface treatments--

〇Moe Naganawa¹, Toshichika Aoki¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:n-GaN Schottky contacts,surface treatment,cleaved surface

We report the effect of surface treatments on electrical characteristics of Ni Schottky contacts formed on a cleaved m-plane n-GaN surface. In only cleaved samples, the Schottky barrier heights distribute in a small range of 0.74-0.79 eV. The n-value is as good as 1.01 to 1.04. Intentionally oxidized samples showed significant decrease of the barrier height and increase of the n-value. HCl treated samples showed large variation in barrier height and n-value.