The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[21p-P17-1~26] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Mon. Mar 21, 2016 4:00 PM - 6:00 PM P17 (Gymnasium)

4:00 PM - 6:00 PM

[21p-P17-20] Application of Supercritical Carbon Dioxide in Electroplating of Gold Materials Used in MEMS Devices

〇(D)Haochun Tang1, Chun-Yi Chen1,2, Tso-Fu Mark Chang1,2, Katsuyuki Machida1,2,3, Daisuke Yamane1,2, Kazuya Masu1,2, Masato Sone1,2 (1.P&I Lab. Tokyo Tech, 2.CREST JST, 3.NTT AT Corp.)

Keywords:MEMS,Gold electroplating,Supercritical carbon dioxide

Recently, gold materials have attracted much attention and are commonly used in micro-electrical-mechanical systems (MEMS) devices due to their excellent electrical and mechanical properties. Electroplating (EP) is often used in preparation of the gold materials because the morphology, crystal structure, and deposition rate of the deposited gold materials could be easily controlled by varying the EP parameters. On the other hand, mechanical strength of gold materials is relatively low when compared with other metallic materials, which is always concern in practical applications in MEMS. In previous studies, grain refinement effect was observed in the nickel films prepared by the EP with electrolyte containing supercritical carbon dioxide (scCO2), which then leads to a significant enhancement in the mechanical strength due to Hall-Petch relationship. ScCO2 is CO2 at temperature and pressure above its critical point, which are 31.1°C and 7.38 MPa. In this work, feasibility of the EP with the scCO2 for preparation of gold films would be evaluated and reported.