2016年第63回応用物理学会春季学術講演会

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13 半導体 » 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[21p-P17-1~26] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

2016年3月21日(月) 16:00 〜 18:00 P17 (屋内運動場)

16:00 〜 18:00

[21p-P17-20] Application of Supercritical Carbon Dioxide in Electroplating of Gold Materials Used in MEMS Devices

〇(D)唐 浩峻1、Chun-Yi Chen1,2、Tso-Fu Mark Chang1,2、町田 克之1,2,3、山根 大輔1,2、益 一哉1,2、曽根 正人1,2 (1.東工大精研、2.CREST JST、3.NTT AT)

キーワード:MEMS,Gold electroplating,Supercritical carbon dioxide

Recently, gold materials have attracted much attention and are commonly used in micro-electrical-mechanical systems (MEMS) devices due to their excellent electrical and mechanical properties. Electroplating (EP) is often used in preparation of the gold materials because the morphology, crystal structure, and deposition rate of the deposited gold materials could be easily controlled by varying the EP parameters. On the other hand, mechanical strength of gold materials is relatively low when compared with other metallic materials, which is always concern in practical applications in MEMS. In previous studies, grain refinement effect was observed in the nickel films prepared by the EP with electrolyte containing supercritical carbon dioxide (scCO2), which then leads to a significant enhancement in the mechanical strength due to Hall-Petch relationship. ScCO2 is CO2 at temperature and pressure above its critical point, which are 31.1°C and 7.38 MPa. In this work, feasibility of the EP with the scCO2 for preparation of gold films would be evaluated and reported.