[21p-P17-1~26] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[21p-P17-8] Development of heat treatment technology for formation of Nickel Silicide electrode of Si-ULSI

〇kazuki kamimura¹, hiroki nakaie¹, tetsuji arai¹, chiaya yamamoto¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, toshiyuki takamatsu² (1.Univ. of Yamanashi, 2.SST Inc.)

Keywords:heat trestment technology,NiSi electrode,Si-ULSI