[21p-S222-1~9] Advanced Fabrication System for Metal Oixde Thin Films

[21p-S222-6] Novel chemical vapor deposition process of oxide thin films using nonequilibrium plasma generated near atmospheric pressure

〇Norifumi Fujimura¹, Yukinori Nose¹, Takuya Kiguchi¹, Tsuyoshi Uehara², Takeshi Yoshimura¹, Atsushi Ashida¹ (1.Graduate School of Engineering, 2.Sekisui Chemical Co.)

Keywords:nonequilibrium atmospheric pressure plasma,wide band gap semiconductors,oxide thin films

We have studied the effect of active species on growth of oxide films in nitrogen nonequilibrium plasma generated near atmospheric pressure using home-made chemical vapor deposition systems. The reaction mechanisms occurred at the surface of oxide films such as ZnO and Ga₂O₃ and the advantages on the decrease in the residual donner concentration and N₂ doping are also discussed.