〇Norifumi Fujimura¹, Yukinori Nose¹, Takuya Kiguchi¹, Tsuyoshi Uehara², Takeshi Yoshimura¹, Atsushi Ashida¹ (1.Graduate School of Engineering, 2.Sekisui Chemical Co.)

4:45 PM - 5:15 PM

[21p-S222-7] Synthesis of Oxide Semiconductor Alloys and Multilayer Structures by Sol-Gel Method

〇Takashi Yasuda¹ (1.ISU)

5:15 PM - 5:45 PM

[21p-S222-8] Electronic device applications of metal oxide thin films by atomic layer deposition method

〇Toshihide Nabatame¹ (1.NIMS)

5:45 PM - 6:15 PM

[21p-S222-9] Emergent phenomena in oxide heterostructures based on molecular-beam epitaxy

〇Atsushi Tsukazaki^1,2 (1.IMR, Tohoku Univ., 2.JST-PRESTO)

Sessions

Symposium » Advanced Fabrication System for Metal Oixde Thin Films

[21p-S222-1~9] Advanced Fabrication System for Metal Oixde Thin Films

[21p-S222-1] Advanced thin film technology towards oxide electronics

[21p-S222-2] Sputtering-Assisted Metalorganic Chemical Vapor Deposition and Its Application to Rare-Earth Doped ZnO

[21p-S222-3] Formation of metal oxide thin films by ECR plasma sputtering

[21p-S222-4] Latest trend of sputtering technologies in Germany

[21p-S222-5] Reactive Plasma Deposition (RPD) equipment

[21p-S222-6] Novel chemical vapor deposition process of oxide thin films using nonequilibrium plasma generated near atmospheric pressure

[21p-S222-7] Synthesis of Oxide Semiconductor Alloys and Multilayer Structures by Sol-Gel Method

[21p-S222-8] Electronic device applications of metal oxide thin films by atomic layer deposition method

[21p-S222-9] Emergent phenomena in oxide heterostructures based on molecular-beam epitaxy

Authentication