[22a-P6-1~19] 15.4 III-V-group nitride crystals

[22a-P6-12] Investigation of thermal tolerance of Si / SiO₂ / GaN /Sapphire structure for integrally formation in MOS transistor and light-emitting device

〇(M1C)Shu Utsunomiya¹, Yoshiki Tachihara¹, Kazuaki Tsuchiyama¹, Keisuke Okada¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech, 2.EIIRIS)

Keywords:Optoelectronics integrated circuit