Effects of high-temperature anneal on operation characteristics of GaN MOSFET

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

10:30 AM - 10:45 AM

〇Kenya Nishiguchi¹, Tamotsu Hashizume¹ (1.RCIQE)

Keywords:GaN,MOS,anneal