The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Seiji Nakamura(TMU)

10:45 AM - 11:00 AM

[22a-W541-7] Insulator/semiconductor interface fixed charge in InAlN-GaN metal/insulator/semiconductor structures with Al2O3 or AlTiO gate insulator

〇Shinya Yamaguchi1, Toshimasa Ui1, Takahiro Hasegawa1 (1.JAIST)

Keywords:interface fixed charge,InAlN-GaN,AlTiO