3:30 PM - 3:45 PM
[6p-C21-8] Characteristics of p-MOS transistors with gate oxides formed by Minimal Fab Laser Heating
〇kazushige sato1,3, Takashi Chiba1,3, Masao Terada1,3, Shinichi Ikeda1,2, Sommawan Khumpuang1,2, Shiro Hara1,2 (1.Minimal Fab General Incorporated Association, 2.AIST, 3.Sakaguchi E.H VOC Corp)