The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 1:45 PM - 7:00 PM C21 (C21)

Kuniyuki Kakushima(Titech), Masato Sone(Titech)

3:30 PM - 3:45 PM

[6p-C21-8] Characteristics of p-MOS transistors with gate oxides formed by Minimal Fab Laser Heating

〇kazushige sato1,3, Takashi Chiba1,3, Masao Terada1,3, Shinichi Ikeda1,2, Sommawan Khumpuang1,2, Shiro Hara1,2 (1.Minimal Fab General Incorporated Association, 2.AIST, 3.Sakaguchi E.H VOC Corp)

Keywords:Minimal Fab, Laser Heating