Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[7a-A402-1~10] 8.4 Plasma etching

Thu. Sep 7, 2017 9:00 AM - 11:45 AM A402 (402+403)

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9:00 AM - 9:15 AM

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

〇Hiromasa Ohmi¹, Jumpei Sato¹, Yusuke Kubota², Tatsuya Hirano¹, Hiroaki Kakiuxhi¹, Kiyoshi Yasutake¹ (1.Osaka Univ., 2.Tokyo Electron LTD.)

9:15 AM - 9:30 AM

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

〇Tomoko Ito¹, Karahashi Kazuhiro¹, Hamaguchi Satoshi¹ (1.Osaka Univ.)

9:30 AM - 9:45 AM

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

〇HU LI¹, Tomoko Ito¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Akiko Hirata², Nagahata Kazunori², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

9:45 AM - 10:00 AM

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF₂

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:00 AM - 10:30 AM

[7a-A402-5] [JSAP Best Review Paper Award Speech] Physics of electron cyclotron resonance ion sources

〇Hitoshi Kuninaka¹ (1.JAXA)

10:30 AM - 10:45 AM

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

〇Azumi Ito¹, Hirotoshi Inui¹, Hirokazu Matsumoto¹ (1.Zeon Corporation)

10:45 AM - 11:00 AM

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

〇Naoki Takeda¹, Yan Zhang¹, Toshio Hayashi¹, Makoto Sekine¹, Hiroki Kondo¹, Kenji ishikawa¹, Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. Inst. Innovation for Future Society)

11:00 AM - 11:15 AM

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

〇Yuki Kondo¹, Itaru Fujita¹, Satoshi Degai¹, Tsuyoshi Tanimoto¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hidenobu Gonda², Yasuhiro Hadano³, Masao Kamiya⁴ (1.Toyohashi Univ. Technol, 2.OSG Corp., 3.Kojima Ind. Corp., 4.Itoh Opt. Ind. co., Ltd.)

11:15 AM - 11:30 AM

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF₄/Ar plasmas

〇(M2)Gento Kuroda¹, Kazuo Takahashi¹, Koji Nishio¹ (1.Kyoto Inst. of Tech)

11:30 AM - 11:45 AM

[7a-A402-10] Chemically chlorine radical-etch of GaN at elevated temperatures

〇Kenji Ishikawa¹, Zecheng Liu¹, Masato Imamura¹, Takayoshi Tsutsumi¹, Hiroki Kondo¹, Osamu Oda¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya University)

Session information

[7a-A402-1~10] 8.4 Plasma etching

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF₂

[7a-A402-5] [JSAP Best Review Paper Award Speech] Physics of electron cyclotron resonance ion sources

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF₄/Ar plasmas

[7a-A402-10] Chemically chlorine radical-etch of GaN at elevated temperatures

Authentication

Session information

[7a-A402-1~10] 8.4 Plasma etching

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He+ Ion Irradiation

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF2

[7a-A402-5] [JSAP Best Review Paper Award Speech] Physics of electron cyclotron resonance ion sources

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si3N4 Etching Gas C4H9F

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF4/Ar plasmas

[7a-A402-10] Chemically chlorine radical-etch of GaN at elevated temperatures

Authentication

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF₂

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF₄/Ar plasmas