Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)
Takayoshi Oshima(Saga Univ.), Tomoki Abe(Tottori Univ.)
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▲：英語発表
▼：奨励賞エントリーかつ英語発表
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1:45 PM - 2:00 PM
〇Riena Jinno1, Takayuki Uchida1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)
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2:00 PM - 2:15 PM
〇Takayuki Uchida1, Riena Jinno1, Shu Takemoto1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)
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2:15 PM - 2:30 PM
〇Michitaka Shimokawa1, Yohei Sawada1, Keita Konishi1, Hisashi Murakami1,2, Bo Monemar3, Yoshinao Kumagai1,2 (1.TUAT, 2.TUAT GIR, 3.Linkoping Univ.)
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2:30 PM - 2:45 PM
〇Keita Konishi1, Ken Goto2,1, Rie Togashi1,3, Hisashi Murakami1,3, Masataka Higashiwaki4, Akito Kuramata2, Shigenobu Yamakoshi2, Bo Monemar3,5, Yoshinao Kumagai1,3 (1.TUAT, 2.Tamura Corporation, 3.TUAT GIR, 4.NICT, 5.Linkoping Univ.)
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2:45 PM - 3:00 PM
〇(M1)Shota Morimoto1, Daisuke Tahara1, Nobutaka Miyauchi1, Hiroyuki Nishinaka1, Masahiro Yoshimoto1 (1.Kyoto Inst. of Tech.)
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3:00 PM - 3:15 PM
〇Kisho Nakamura1, Hiroyuki Morita1, Nobuo Tsuchimine2, Satoru Kaneko3,1, Akifumi Matsuda1, Mamoru Yoshimoto1 (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)
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3:15 PM - 3:30 PM
〇Shinji Nakagomi1, Takashi Yasuda1, Yoshihiro Kokubun1 (1.Ishinomaki Senshu)
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3:30 PM - 3:45 PM
〇Ravikiran Lingaparthi1, Yoshiaki Nakata1, Akito Kuramata2, Shigenobu Yamakoshi2, Masataka Higashiwaki1 (1.NICT, 2.Tamura Corporation)
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4:00 PM - 4:15 PM
〇Yohei Sawada1, Natsuki Ueda2, Keita Konishi1, Yoshinao Kumagai1,3 (1.Dept. of Appl. Chem., TUAT, 2.Fac. of Tech., TUAT, 3.TUAT GIR)
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4:15 PM - 4:30 PM
〇Takeyoshi Onuma1,2, Kohei Sasaki3,2, Tatekazu Masui3, Tomohiro Yamaguchi1, Tohru Honda1, Akito Kuramata3, Masataka Higashiwaki2 (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)
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4:30 PM - 4:45 PM
〇Daiki Wakimoto1,2, Quang Tu Thieu2, Kohei Sasaki1,2, Ken Goto1,2, Keita Konishi3, Hisashi Murakami3, Akito Kuramata1,2, Yoshinao Kumagai3, Shigenobu Yamakoshi1,2 (1.Tamura Corp., 2.Novel Crystal Tech., 3.Tokyo Univ. of Agri. and Tech.)
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4:45 PM - 5:00 PM
〇Osamu Ueda1, Noriaki Ikenaga1, Tomoya Moribayashi2, Kimiyoshi Koshi3, Kazuyuki Iizuka3, Akito Kuramata3, Makoto Kasu2 (1.Kanazawa Inst. Tech., 2.Saga Univ., 3.Tamura Corp.)
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5:00 PM - 5:15 PM
〇Satoshi Masuya1, Kimiyoshi Koshi2, Kazuyuki Iizuka2, Akito Kuramata2, Osamu Ueda3, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Co., 3.Kanazawa Inst. Tech.)
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5:15 PM - 5:30 PM
〇Takayoshi Oshima1, Makoto Hashikawa1, Sansei Tomizawa1, Kohei Sasaki2,3, Akito Kuramata2,3, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ., 2.Tamura Corp., 3.NCT, Inc.)
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5:30 PM - 5:45 PM
〇Hidetoshi Nakahata1, Takayuki Suga1, Keita Konishi1, Rie Togashi1,2, Hisashi Murakami1,2, Plamen Paskov3, Bo Monemar2,3, Yoshinao Kumagai1,2 (1.TUAT, 2.TUAT GIR, 3.Linkoping Univ.)
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5:45 PM - 6:00 PM
〇Takayuki Suga1, Hidetoshi Nakahata1, Keita Konishi1, Rie Togashi1,2, Hisashi Murakami1,2, Plamen Pascov3, Bo Monemar2,3, Yoshinao Kumagai1,2 (1.TUAT, 2.TUAT GIR, 3.Linkoping Univ.)
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