Oral presentation

[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 9:00 AM - 11:30 AM C21 (C21)

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9:00 AM - 9:15 AM

[5a-C21-1] Time-resolved photoluminescence of self-assembled InGaAs quantum dots grown with various As partial pressures

〇Masayuki Urabe¹, Kazuki Takeishi¹, Kodai Itabashi¹, Akihiro Washida¹, Junichi Takayama¹, Satoshi Hiura¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

9:15 AM - 9:30 AM

[5a-C21-2] Growth and carrier dynamics optically excited in multi-layered self-assembled quantum dots of InGaAs

〇Akihirro Washida¹, Kodai Itabashi¹, Masayuki Urabe¹, Kazuki Takeishi¹, Junichi Takayama¹, Satoshi Hiura¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

9:30 AM - 9:45 AM

[5a-C21-3] Electronic state of closely-stacked InAs/GaAs quantum dots grown at various substrate temperature

〇Toshiyuki Kaizu^1,2, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ.., 2.CSREA, Kobe Univ.)

9:45 AM - 10:00 AM

[5a-C21-4] Growth Rate Dependence of Spatial Regularity of InAs-GaAs Quantum Dots

〇Tomoya Konishi¹, Christopher Burrows², Gavin Bell² (1.NIT, Anan, 2.Univ. Warwick)

10:15 AM - 10:30 AM

[5a-C21-5] Polarization dependence of photoluminescence from InAs quantum dots and superlattice grown by digital embedding on InP(311)B substrates

〇Hiroyuki Yamamoto^1,2, Kouichi Akahane², Atsushi Matsumoto², Toshimasa Umezawa², Atsushi Kanno², Naokatsu Yamamoto², Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT)

10:30 AM - 10:45 AM

[5a-C21-6] Luminescence properties of high-density InAs QDs on GaAsSb/GaAs(001) (2)

〇Ryo Sugiyama¹, Sho Tatsugi¹, Tomah Sogabe², Koichi Yamaguchi¹ (1.UEC, 2.UEC i-PERK)

10:45 AM - 11:00 AM

[5a-C21-7] Growth of multi-stacked InGaAs/AlGaAs quantum dots on GaAs (311)B substrate

〇(M2)Ayaka Matsuoka¹, Yasushi Shoji², Ryo Tamaki^1,2, Yoshitaka Okada^1,2 (1.The Univ. of Tokyo, 2.RCAST, The Univ. of Tokyo)

11:00 AM - 11:15 AM

[5a-C21-8] Structural analysis of In_xGa_1-xAs/InAs/GaAs(111)A grown by ATLAS method

〇Takaaki Mano¹, Akihiro Ohtake¹, Yoshiki Sakuma¹ (1.NIMS)

11:15 AM - 11:30 AM

△ [5a-C21-9] Evaluation of current-voltage characteristics of selectively-grown single InGaAs microdisc on Si (111) with an optical micro-manipulator

〇(D)Toma Watanabe¹, Takeshi Ishida², Satoshi Iwamoto², Yasuhiko Arakawa², Yoshiaki Nakano¹, Masakazu Sugiyama³ (1.Univ. of Tokyo, 2.IIS, 3.RCAST)

Oral presentation

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 1:45 PM - 5:15 PM C21 (C21)

Manabu Mitsuhara(NTT), Kouichi Akahane(NICT)

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1:45 PM - 2:00 PM

[5p-C21-1] Influence of Nitrogen Atomic Arrangement in Dilute Nitrides on Band Gap Energy

〇(M2)Kazuki Miyajima¹, Shuhei Yagi¹, Yasushi Shoji², Yoshitaka Okada², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.RCAST, The Univ. of Tokyo.)

2:00 PM - 2:15 PM

[5p-C21-2] Segregation of Bi atoms during MBE growth of GaAs/GaAsBi quantum wells

〇(M1)Akira Tsukamoto¹, Eigo Ito¹, Koichiro Higaki¹, Saburo Tanaka¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

2:15 PM - 2:30 PM

[5p-C21-3] Temperature Characteristics of GaAsBi/GaAs MQW LED grown by two-substrate-temperatures technique

〇Toui Higuchi¹, Taishi Sasaki¹, Akira Tsukamoto¹, Eigo Ito¹, Kohki Yamada¹, Pallavi Patil¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

2:30 PM - 2:45 PM

[5p-C21-4] Fabrication of GaAs_1-xBi_x photodiodes and their spectral response

〇Kyohei Kakuyama¹, Kosaku Suzuki¹, Sho Hasegawa¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

2:45 PM - 3:00 PM

△ [5p-C21-5] Effect of substrate pre-treatment on antiphase domain formation in GaAs layers directly grown on on-axis Si(100) substrate

〇Ryo Nakao^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.Nanophotonics Center)

3:00 PM - 3:15 PM

[5p-C21-6] AlAs/GaAs distributed Bragg reflector grown on concaved GaAs substrate

〇Kouichi Akahane¹, Tetsuya Ido¹, Kazuto Mochizuki², Naokatsu Yamamoto¹ (1.NICT, 2.UEC)

3:30 PM - 3:45 PM

[5p-C21-7] MBE growth of strained InGaAs/InAlAs quantum well structure on (111)InP

〇Yuichi Kawamura¹, Azusa Taniguchi¹ (1.Osaka Pref.Univ.)

3:45 PM - 4:00 PM

[5p-C21-8] Continuous MOVPE growth of GeSn and GaAs layers on GaAs substrate

〇(M1)Yuki Fujiwara¹, Kakeru Takahashi¹, Takeshi Fujisawa², Kouji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki, 2.Hokkaido Univ.)

4:00 PM - 4:15 PM

[5p-C21-9] GaAs/Ge/GaAs heterostructures grown on (113)B and (113)A GaAs substrates by MBE

〇Xiangmeng Lu¹, Yasuo Minami¹, Naoto Kumagai², Takahiro Kitada¹ (1.Tokushima Univ., 2.AIST)

4:15 PM - 4:30 PM

[5p-C21-10] Strain-compensated InGaAs(Sb)/InGaAs(Sb) MQW for 2 μm wavelength

〇Manabu Mitsuhara¹, Yoshitaka Ohiso¹ (1.NTT Device Technology Labs.)

4:30 PM - 4:45 PM

△ [5p-C21-11] Electrical characteristics of InSb films after BLDA

〇(D)Charith Jayanada Koswaththage¹, Tatsuyuki Higashizako¹, Tatsuya Okada¹, Takashi Noguchi¹ (1.Univ. of the Ryukyus)

4:45 PM - 5:00 PM

[5p-C21-12] Study of a mechanism of Mn incorporation into GaAs(110)

〇Motoi Hirayama¹, Sho Kishigami¹ (1.NIT Anan)

5:00 PM - 5:15 PM

[5p-C21-13] Stabilization mechanism of Se-treated GaAs(111)B surface

〇Akihiro Ohtake¹, Shunji Goto², Jun Nakamura² (1.NIMS, 2.UEC-Tokyo)

Poster presentation

[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 6, 2017 1:30 PM - 3:30 PM PA7 (P)

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1:30 PM - 3:30 PM

[6p-PA7-1] Upconversion luminescence from GaPN alloys

〇Wataru Takahashi¹, Kengo Takamiya¹, Shuhei Yagi¹, Takashi Ito², Hidefumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.Tokyo Univ. Inst.)

1:30 PM - 3:30 PM

[6p-PA7-2] Influence of N-related point defects on lattice constants in GaPN by First Principles Calculation

〇Yoshiki Tachihara¹, Keisuke Yamane¹, Hiroto Sekiguch¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS.)

1:30 PM - 3:30 PM

[6p-PA7-3] Si doping mechanism in Si-GaAsN

〇(M1)Takashi Tsukasaki¹, Ren Hiyoshi¹, Naoki Shiino¹, Takuya Odaka¹, Takuya Kurosawa¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

1:30 PM - 3:30 PM

[6p-PA7-4] Characterization of GaAsN Films with Different N Distribution Grown by Atomic Layer Epitaxy.

〇Daiki Ueda¹, Yuki Yokoyama¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹ (1.Univ. Miyazaki)

1:30 PM - 3:30 PM

[6p-PA7-5] Effects of annealing in GaAsN Films measured by Polarization Raman Spectroscopy

〇Toshiki Wada¹, Hideaki Hashimoto¹, Yuki Yokoyama¹, Koji Maeda¹, Hidetoshi Suzuki¹ (1.Univ. of Miyazaki)

1:30 PM - 3:30 PM

[6p-PA7-6] Si impurities concentration dependence of optical properties of Si-doped GaAsN

〇Ren Hiyoshi¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[6p-PA7-7] Polarization anisotropy of luminescence centers in nitrogen delta-doped GaAs (111)A

〇Ruoxi Wang¹, Kyohei Matsuyama¹, Yoshiki Sakuma², Michio Ikezawa¹, Yasuaki Masumoto¹ (1.Tsukuba Univ., 2.NIMS)

1:30 PM - 3:30 PM

[6p-PA7-8] Fabrication of GaSb/AlGaSb Multi QWs Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film / Dots Nucleation Layers

〇Ryuto Machida¹, Kouichi Akahane², Issei Watanabe², Shinsuke Hara², Sachie Fujikawa¹, Akifumi Kasamatsu², Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

1:30 PM - 3:30 PM

[6p-PA7-9] Growth of Interfacially-controlled Heteroepitaxial GaSb Thin Film on GaAs(100) Substrate

〇Takami Ito¹, Hiroki Suzuki¹, Yusuke Watanabe¹, Sachie Fujikawa², Ryuto Machida¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.Tokyo Denki Univ.)

1:30 PM - 3:30 PM

[6p-PA7-10] Effect of LT-AlSb growth on electron transport properties of InSb HEMT structure

〇Yuki Endo¹, Yoshiaki Harada¹, Jun Takeuchi¹, Takuya Iwaki¹, Ryuto Machida¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science)

1:30 PM - 3:30 PM

[6p-PA7-11] Effect of Low Temperature Grown InSb on InSb Thin Film on GaAs Substrate

〇Yusuke Watanabe¹, Kyota Shiino¹, Takami Ito¹, Hiroki Suzuki¹, Sachie Fujikawa², Ryuto Machida¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science., 2.Tokyo Denki Univ.)

1:30 PM - 3:30 PM

[6p-PA7-12] n-AlGaAsSb and 3-micron range active layer growth on InAs substrate by MOVPE

〇Yuya Yamagata¹, Keita Yoshimoto¹, Yuki Inoue¹, Ryosuke Wakaki¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ of Miyazaki)

1:30 PM - 3:30 PM

[6p-PA7-13] Site-control of In Droplet Formation (2)

〇(M2)Takayuki Kusama¹, Kanji Iizuka¹ (1.NIT)

1:30 PM - 3:30 PM

[6p-PA7-14] Crystalline quality of low-temperature-grown In_xGa_1-xAs on InP substrate

〇Yoriko Tominaga¹, Shingo Hirose¹, Yutaka Kadoya¹, Hitoshi Morioka², Noriaki Ikenaga³, Osamu Ueda³ (1.AdSM, Hiroshima Univ., 2.Bruker AXS K.K., 3.Kanazawa Inst. Tech.)

1:30 PM - 3:30 PM

[6p-PA7-15] Preserved Vertical Lattice Constant by the Coherent Growth at GaAs/GaAsBi Core-Shell Nanowire Sidewall

〇(M1)Kousuke Yano¹, Kyohei Takada¹, Pallavi Patil¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹, Kazuki Nagashima², Takeshi Yanagida² (1.Ehime Univ., 2.Kyushu Univ.)

1:30 PM - 3:30 PM

[6p-PA7-16] Growth of Ge Thin Film on Si(001) Substrate by Pulse Jet Epitaxy using tBGe

〇Hironori Akita¹, Masahiro Kawano¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹ (1.Univ. Miyazaki)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [5a-C21-9] Evaluation of current-voltage characteristics of selectively-grown single InGaAs microdisc on Si (111) with an optical micro-manipulator

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [5p-C21-5] Effect of substrate pre-treatment on antiphase domain formation in GaAs layers directly grown on on-axis Si(100) substrate

△ [5p-C21-11] Electrical characteristics of InSb films after BLDA

[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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