〇(M1)Sohta Hida¹, Takahiro Yamasaki², Takahisa Ohno², Atsushi Shimizu³, Satoru Kishida^1,4, Kentaro Kinoshita³ (1.Tottori Univ., 2.NIMS, 3.Tokyo Univ. of Science, 4.TiFREC)

3:00 PM - 3:15 PM

Pt Cells

〇Ryosuke Matsui¹, Yutaka Kuriyama¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

△ [5p-A202-9] Micro Structure Analysis of Resistive Switching Regions in Rutile-TiO₂ Single Crystal Memristors by TEM

〇Kengo Yamaguchi¹, Hiroya Murakami¹, Takuma Shimizu¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

△ [5p-A202-10] Non-Destructive Observation of Chemical State in ReRAM
by Laser-excited Photoemission Electron Microscopy

〇(M2)Junpei Kawakita^1,2, Hisashi Shima^2,3, Yasuhisa Naitoh^2,3, Hiro Akinaga^2,3, Toshiyuki Taniuchi^1,2, Shik Shin^1,2 (1.ISSP, Univ. of Tokyo, 2.AIST-UTokyo OPERANDO-OIL, 3.NeRI-AIST)

4:00 PM - 4:15 PM

△ [5p-A202-11] Resistive switching characteristics of four terminal TiO₂ single crystal memristive devices

〇(M2)Takuma Shimizu¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

△ [5p-A202-12] Study on the effect of Hf oxide film sputtering condition
on resistive random access memory properties

〇(M1)Atsushi Azuma¹, Ryo Nakajima¹, Hayato Yoshida¹, Tomohiro Shimizu¹, Takeshi Ito¹, Syouso Shingubara¹ (1.Kansai Univ.)

4:30 PM - 4:45 PM

[5p-A202-13] Hydrogen gas sensor device utilizing resistive change of Ta₂O₅

Hisashi Shima¹, 〇Yasuhisa Naitoh¹, Zhiqiang Wei², Kazunari Homma², Satoru Fujii², Touru Sumiya¹, Hiroyuki Akinaga¹ (1.NeRI AIST, 2.PSCS)

4:45 PM - 5:00 PM

△ [5p-A202-14] Investigations on Oxygen-Scavenging Effects of
Interfacial Metal Layers in Metal/Oxide Junctions

〇Ryosuke Nakagawa¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

5:00 PM - 5:15 PM

[5p-A202-15] Mechanism analysis of resistive switching occurring at Pt/Nb:SrTiO₃ junction interface

〇Yuuto Hagihara¹, Kentaro Kinoshita², Hiromi Tanaka³, Satoru Kishida^1,4 (1.Tottori Univ., 2.Tokyo Univ. of Science, 3.NIT, Yonago Coll., 4.TiFREC)

5:15 PM - 5:30 PM

[5p-A202-16] Flexible resistive switching memory with solution-processed silicon-nanocrystal thin film

〇Takeshi Kawauchi¹, Shinya Kano¹, Minoru Fujii¹ (1.Kobe Univ.)

5:30 PM - 5:45 PM

[5p-A202-17] Solid-phase epitaxy of iron oxide nanodots with improved crystallinity and their electrical properties

〇(M1)Tsukasa Terada¹, Takafumi Ishibe¹, Kentaro Watanabe^1,2, Yoshiaki Nakamura^1,2 (1.Osaka University, 2.CREST-JST)

5:45 PM - 6:00 PM

[5p-A202-18] Character feature extraction system composed of polymer neural network

〇Wataru Hikita¹, Tetsuya Asai², Yuji Kuwahara¹, Megumi Akai-Kasaya^1,3 (1.Osaka Univ., 2.Hokkaido Univ., 3.JST PRESTO)

Oral presentation

[6a-A202-1~10] 6.3 Oxide electronics

Wed. Sep 6, 2017 9:00 AM - 11:45 AM A202 (202)

Makoto Minohara(KEK)

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9:00 AM - 9:15 AM

[6a-A202-1] Magnetotransport properties of compressive strained Eu_1-xLa_xTiO₃ films on LSAT substrates

〇KEI S TAKAHASHI^1,2, Tomoki Murata³, Qing-Yan Wang¹, Kazuki Maruhashi³, Yoshinori Tokura^1,3, Masashi Kawasaki^1,3 (1.RIKEN CEMS, 2.JST, PREST, 3.Univ. of Tokyo)

9:15 AM - 9:30 AM

△ [6a-A202-2] Fabrication and magnetotransport properties of high mobility EuTiO₃quantum wells

〇Kazuki Maruhashi¹, Kei Takahashi^2,3, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys., Univ. of Tokyo, 2.RIKEN CEMS, 3.JST, PREST)

9:30 AM - 9:45 AM

△ [6a-A202-3] Ferromagnetism at the LaAlO₃/SrTiO₃ interface revealed by laser-excited photoelectron emission microscopy

〇Yoshihito Motoyui¹, Jiyeon Lee¹, Toshiyuki Taniuchi¹, Ryota Takahashi¹, Mikk Lippmaa¹, Shik Shin¹ (1.ISSP, Univ. Tokyo)

9:45 AM - 10:00 AM

△ [6a-A202-4] Grain Boundary Characteristics Dependence of Electric Field Induced Ion Dynamics in SrTiO₃

〇(PC)Issei Sugiyama¹, Shibata Naoya^2,3, Ikuhara Yuichi^2,3,4 (1.Tokyo Inst. Tech., 2.Tokyo Univ., 3.JFCC, 4.Tohoku Univ.)

10:00 AM - 10:15 AM

△ [6a-A202-5] Electrochemical characterizations of ionic liquid / single-crystal ZnO interfaces

〇Mariko Kanai¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

10:15 AM - 10:30 AM

△ [6a-A202-6] Synthesis and orientation control of epitaxial LiNi1/3Mn1/3Co1/3O2 thin films using pulsed laser deposition

〇(M1)Naoto Nakamura¹, Nishio Kazunori¹, Shimizu Ryota¹, Sugiyama Issei¹, Hitosugi Taro¹ (1.Tokyo Tech)

10:45 AM - 11:00 AM

[6a-A202-7] [Young Scientist Presentation Award Speech] Experimental and theoretical investigation of electronic structure of SrFeO_3−xF_xepitaxial thin films prepared via topotactic reaction

〇Tsukasa Katayama¹ (1.Titech)

11:00 AM - 11:15 AM

△ [6a-A202-8] Local Topotactic Reduction of SrFeO₃ using Atomic Force Microscope

〇Shunya Tanaka¹, Dai Kutsuzawa¹, Yasuhsi Hirose¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

11:15 AM - 11:30 AM

△ [6a-A202-9] Long-Term Stability of Oxide Nanowire Chemical Sensors by Metal Oxide Contact Layer

〇Tsunaki Takahashi¹, Hao Zeng², Masaki Kanai¹, Guozu Zhang¹, Yong He¹, Kazuki Nagashima¹, Takeshi Yanagida^1,2 (1.IMCE, Kyushu Univ., 2.Eng. Sci., Kyushu Univ.)

11:30 AM - 11:45 AM

△ [6a-A202-10] Electron Transport Property Determined by Oxygen Partial Pressure in Single Crystalline Oxide Nanowires

〇Hiroshi Anzai¹, Tsunaki Takahashi², Guozhu Zhang², Masaki Kanai², Yong He², Kazuki Nagashima², Takeshi Yanagida^1,2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. IMCE)

Oral presentation

[7a-A202-1~8] 6.3 Oxide electronics

Thu. Sep 7, 2017 9:30 AM - 11:30 AM A202 (202)

Kouhei Yoshimatsu(Titech)

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9:30 AM - 9:45 AM

[7a-A202-1] Orbital magnetic moments in SrRuO₃ epitaxial films with interfacially controlled magnetic anisotropy

〇Daisuke Kan¹, Masaichiro Mizumaki², Yuichi Shimakawa¹ (1.ICR, Kyoto Univ., 2.JASRI/SPring-8)

9:45 AM - 10:00 AM

[7a-A202-2] Current-voltage characteristics of (Ti_0.4V_0.6)O₂/TiO₂:Nb (001) interfaces

〇Yuki Suga¹, Fumiya Yoshii¹, Yuka Matsuura¹, Kensei Terashima², Takanori Wakita², Takayoshi Yokoya², Yuji Muraoka² (1.Okayama Univ., 2.Okayama Univ. RIIS)

10:00 AM - 10:15 AM

[7a-A202-3] Smart Molecule Transporter Based on Molecularly Fingerprinted Oxide Nanowires

Yong He¹, 〇Kazuki Nagashima¹, Hideto Yoshida², Tsunaki Takahashi¹, Guozhu Zhang¹, Masaki Kanai¹, Seiji Takeda², Takeshi Yanagida¹ (1.IMCE Kyusyu Univ., 2.ISIR Osaka Univ.)

10:15 AM - 10:30 AM

▲ [7a-A202-4] Improvement of adhesion and rigidity of TiO₂ thin film by laser radiation

〇(DC)Dauksta Edvins^1,2, Medvids Arturs², Mizeikis Vygantas¹, Murakami Kenji¹ (1.Shizuoka Univ., 2.Riga Technical Univ.)

10:30 AM - 10:45 AM

[7a-A202-5] Development of structure analysis method of perovskite-type oxide thin film from surface X-ray scattering data

〇(D)Masato Anada¹, Yoshinori Nakanishi-Ohno², Masato Okada³, Tsuyoshi Kimura³, Yusuke Wakabayashi¹ (1.Osaka Univ. (Engineering Science), 2.The Univ. of Tokyo (Arts and Sciences), 3.The Univ. of Tokyo (Frontier Science))

10:45 AM - 11:00 AM

[7a-A202-6] Dielectric constant of tungsten oxide (WO_3-x) films

〇Risa Tatewaki¹, Junjun Jia¹, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ.)

11:00 AM - 11:15 AM

▲ [7a-A202-7] Synthesis and Characterization of ZnO and Al-doped ZnO Nanostructures at Different Annealing Temperatures

Sameera Attanayake², Masayuki Okaya¹, 〇Kenji Murakami¹ (1.GSIST, Shizuoka Univ., 2.GSST, Shizuoka Univ.)

11:15 AM - 11:30 AM

[7a-A202-8] First Principles Analysis of Structural Transformation between \alpha’ and \alpha phases for LiZr₂(PO₄)₃ Solid State Electrolytes with NASICON Type

〇Minoru Ikeda¹, Takahisa Ohno¹, Kazutaka Mitsuishi¹, Yoshiyuki Inaguma², Koki Funayama², Daisuke Mori^2,3 (1.NIMS, 2.Gakushuin Univ., 3.Mie Univ.)

Oral presentation

[7p-A202-1~15] 6.3 Oxide electronics

Thu. Sep 7, 2017 1:15 PM - 5:15 PM A202 (202)

Takeaki Yajima(Univ. of Tokyo), Daisuke Kan(Kyoto Univ.)

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1:15 PM - 1:30 PM

[7p-A202-1] [JSAP Young Scientist Award Speech] Metal-insulator transition and electronic structure of β-pyrochlore-type CsW₂O₆

〇Takuto Soma¹, Kohei Yoshimatsu¹, Koji Horiba^2,3, Hiroshi Kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.KEK-PF, 3.MCES)

1:30 PM - 1:45 PM

[7p-A202-2] Electrical transport properties of CuO-CaCu₃Ru_4-xMn_xO₁₂ composite ceramics

〇Akihiro Tsuruta¹, Masashi Mikami¹, Yoshiaki Kinemuchi¹, Ichiro Terasaki^1,2, Norimitsu Murayama¹, Woosuck Shin¹ (1.AIST, 2.Nagoya Univ.)

1:45 PM - 2:00 PM

[7p-A202-3] Visualizing All-In-All-Out Antiferromagnetic Domains of a Tb₂Ir₂O₇ Thin Film Utilizing Scanning SQUID Microscopy

〇Yusuke Kozuka¹, Takahiro Fujita¹, Masaki Uchida¹, Tsutomu Nojima², Atsushi Tsukazaki², Jobu Matsuno³, Taka-hisa Arima^3,4, Masashi Kawasaki^1,3 (1.Dept. Appl. Phys., Univ. Tokyo, 2.IMR, Tohoku Univ., 3.RIKEN-CEMS, 4.Dept. Adv. Mater. Sci., Univ. Tokyo)

2:00 PM - 2:15 PM

[7p-A202-4] Probing All-In-All-Out Antiferromagnetic Domains of Tb₂Ir₂O₇ Thin Films Utilizing Magnetoresistance

Takahiro Fujita¹, 〇Yusuke Kozuka¹, Jobu Matsuno², Masaki Uchida¹, Atsushi Tsukazaki³, Taka-hisa Arima^2,4, Masashi Kawasaki^1,2 (1.Dept. Appl. Phys., Univ. Tokyo, 2.RIKEN-CEMS, 3.IMR, Tohoku Univ., 4.Dept. Adv. Mater. Sci., Univ. Tokyo)

2:15 PM - 2:30 PM

△ [7p-A202-5] Anomalous Hall Effect in SrCoO₃ thin films

〇Yuki Ohuchi¹, Jobu Matsuno², Yusuke Kozuka¹, Masaki Uchida¹, Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.RIKEN CEMS)

2:30 PM - 2:45 PM

△ [7p-A202-6] Growth and physical properties of La₂VFeO₆ double-perovskite films

〇Junya Ishimaru¹, Kohei Yoshimatsu¹, Koji Horiba^2,3, Hiroshi Kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech. Chem. Sci. Eng., 2.KEK-PF, 3.MCES)

2:45 PM - 3:00 PM

[7p-A202-7] Strain-induced transport modulation in VO₂ freestanding nanowire-channel transistor

〇Yoshiyuki Higuchi¹, Teruo Kanki¹, Luca pellegrino^2,3, Nicola Manca³, Daniele Marre^2,3, Hidekazu Tanaka¹ (1.ISIR Osaka Univ., 2.CNR-SPIN, 3.Genova Univ.)

3:00 PM - 3:15 PM

[7p-A202-8] Implementing type-Ⅱ neuron function using VO₂ metal-insulator transition

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ of Tokyo)

3:30 PM - 3:45 PM

△ [7p-A202-9] Superconductivity of LaO epitaxial thin film

〇(DC)Kenichi Kaminaga^1,2, Daichi Oka², Tomoteru Fukumura^2,3,4, Tetsuya Hasegawa¹ (1.Univ. Tokyo, 2.Tohoku Univ., 3.WPI-AIMR, 4.CSRN)

3:45 PM - 4:00 PM

△ [7p-A202-10] Anomalous behaviors in Hall resistivity of SrRuO₃ thin films under compressive strain

〇(M1)Kento Kobayashi¹, Daisuke Kan¹, Yuichi Shimakawa¹ (1.ICR, Kyoto Univ.)

4:00 PM - 4:15 PM

[7p-A202-11] Local-pressure-induced insulation of a V₂O₃ film with conductive AFM

〇Joe Sakai¹, Natalia Alyabyeva², Jerome Wolfman¹, Patrice Limelette¹, Antoine Ruyter¹, Hiroshi Funakubo³ (1.Univ. Tours, 2.Univ. Paris-Sud, 3.Tokyo Tech.)

4:15 PM - 4:30 PM

[7p-A202-12] EDLT performance of SrTiO₃ /LaTiO_x artificial superlattice structures

〇Takashi Tojo¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Toyko Tech., Dept. Chem. Sci. Eng., 2.MCES)

4:30 PM - 4:45 PM

[7p-A202-13] Thickness dependence of dielectric properties in epitaxially strained garnet ferrites

〇Hiroyasu Yamahara¹, Akihiro Katougi¹, Ryota Kikuchi¹, Eito Sato¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[7p-A202-14] Steep-slope transistors based on VO₂/atomically thin semiconductor heterostructures

〇Mahito Yamamoto¹, Teruo Kanki¹, Azusa Hattori¹, Ryo Nouchi², Takashi Taniguchi³, Kenji Watanabe³, Keiji Ueno⁴, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.NIMS, 4.Saitama Univ.)

5:00 PM - 5:15 PM

△ [7p-A202-15] Electrolyte-gating-induced insulator-to-superconductor transition in electron-doped high-T_c cuprate superconductor La_2-xCe_xCuO₄

〇(M2)Hideki Matsuoka¹, Masaki Nakano¹, Masaki Uchida¹, Masashi Kawasaki^1,2, Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

Oral presentation

[8a-A202-1~11] 6.3 Oxide electronics

Fri. Sep 8, 2017 9:00 AM - 12:00 PM A202 (202)

Shingo Maruyama(Tohoku Univ.)

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9:00 AM - 9:15 AM

[8a-A202-1] Effect of post-deposition annealing on electrochemically deposited Cu₂O thin-films

〇Yuki Takiguchi¹, AOI Orisaka², Shinsuke Miyajima² (1.Dept. of Physical Electronics, Tokyo Tech., 2.Dept. of Electrical and Electronic Engineering, Tokyo Tech.)

9:15 AM - 9:30 AM

[8a-A202-2] Effect of Cl doping on electrochemically deposited Cu₂O thin films

〇Aoi Orisaka¹, Yuki Takiguchi², Shinsuke Miyajima¹ (1.Dept. of Electrical and Electronic Engineering, Tokyo Tech., 2.Dept. of Physical Electronics, Tokyo Tech.)

9:30 AM - 9:45 AM

[8a-A202-3] Cu₂O homojunction solar cells prepared by electrochemical deposition
and their application to photorechargeable battery

〇Tetsuya Ageno¹, Takeru Saisho¹, Daiki Maeda¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima univ., 2.Takata Corp.)

9:45 AM - 10:00 AM

[8a-A202-4] Fabrication and Characterization of Cu₂O Thin Films by Mist CVD Method

〇Ryo Wakashima¹, Toshikazu Kawai¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

▲ [8a-A202-5] Improvement of Power Conversion Efficiency of Dye Sensitized Solar Cells by Depositing Light Scattering Layers of TiO₂ by Electrophoresis

〇(M2)Jingwen Hu¹, Sakika Ogura¹, Yuuki Sato¹, Shinzo Yoshikado¹ (1.Doshisha Univ.)

10:30 AM - 10:45 AM

[8a-A202-6] Photocatalytic TiO₂ films deposited on flexible polymer substrates by reactive sputtering

〇yuka kitazawa¹, Junjun Jia¹, Shin-ichi Nakamura¹, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ.)

10:45 AM - 11:00 AM

[8a-A202-7] Surface band bending of photocatalytic TiO₂

〇Nobuo Nakajima¹, Yuma Noji¹, Keisuke Oshiro¹ (1.Hiroshima Univ.)

11:00 AM - 11:15 AM

▲ [8a-A202-8] Research on fabrication and characterization of InFeO₃ thin film for Photoelectrochemical electrode

〇(M2)BODONG ZHANG¹, Munetoshi Seki¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

11:15 AM - 11:30 AM

[8a-A202-9] Hydrogen generation by photocatalysist using Fe, Sc-doped TiO2/n-TiO2/Ti structure

〇Takuya Kawaguchi¹, Jumpei Oikawa¹, Makoto Minohara², Koji Horiba², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo. Univ. Sci., 2.PF, KEK)

11:30 AM - 11:45 AM

[8a-A202-10] Fabrication of FeOOH/FeS₂ Heterojunction by Electrochemical Deposition and Sulfur Annealing

〇Sayaka Maki¹, Masaya Ichimura¹ (1.NITech)

11:45 AM - 12:00 PM

[8a-A202-11] Bandgap of GaN-InN-ZnO Solid Solution

〇Toshihisa Anazawa¹, Toshio Manabe¹, Hideyuki Amada¹, Fumiaki Kumasaka¹, Naoki Awaji¹, Yoshihiko Imanaka¹ (1.Fujitsu Labs.)

Poster presentation

[8p-PA1-1~27] 6.3 Oxide electronics

Fri. Sep 8, 2017 1:30 PM - 3:30 PM PA1 (P)

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1:30 PM - 3:30 PM

[8p-PA1-1] Low-temperature growth of VO₂ films on conductive ZnO electrodes.

〇Kenta Sato¹, Hiroaki Hoshino¹, Tomohiro Aoto¹, Md. Suruz Mian¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[8p-PA1-2] Lowering of transition temperature of VO2 films on ZnO/glass substrates by rf substrate bias sputtering

〇Hiroaki Hoshino¹, Kenta Sato¹, Kunio Okimura¹ (1.Tokai univ.)

1:30 PM - 3:30 PM

[8p-PA1-3] Self-oscillation phenomena transitioning between metallic states in phase transition VO₂

〇(M1)Tomohiro Aoto¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[8p-PA1-4] Influence of magnetic field strength on low temperature growth of Al-doped ZnO thin films

〇(M2)Kazuki Yuzurihara¹, Kenta Sato¹, Hiroaki Hoshino¹, Kunio Okimura¹, Yoshio Yasumori² (1.Tokai Univ., 2.Tokai Univ. Ctr. Educ. Res. Dev.)

1:30 PM - 3:30 PM

[8p-PA1-5] RHEED oscillations of SrTiO₃ films made by pulsed laser deposition using the fourth harmonic Nd:YAG pulsed laser

〇Takumi Onodera¹, Yugo Takashima¹, Tomoyuki Taira¹, Motonori Nakamura¹, Koji Takamura¹ (1.NIT, Asahikawa College)

1:30 PM - 3:30 PM

[8p-PA1-6] Enhancement of the magnetization in noncollinear antiferromagnetic insulator SmFeO₃ epitaxial thin films

〇Naoya Tanahashi¹, Motoki Kuroda¹, Tetsuya Hajiri¹, Kenji Ueda¹, Hidefumi Asano¹ (1.Nagoya Univ.)

1:30 PM - 3:30 PM

[8p-PA1-7] Metal-Insulator Transitions of NiS Nanocrystals

〇Ushijima Koki¹, Masaki Imamura², Kazutoshi Takahashi², Hirofumi Ishii³, Yen-Fa Liao³, Yuji Inagaki⁴, Tatsuya Kawae⁴, Tetsuya Kida⁵, Masashi Nantoh⁶ (1.Saga Univ., 2.SLAC, Saga Univ., 3.NSRRC, 4.Kyushu Univ., 5.Kumamoto Univ., 6.RIKEN)

1:30 PM - 3:30 PM

[8p-PA1-8] Ti doping effect on Metal-Insulator Transition in V₂O₃ Nanocrystals

〇Toru Maruyama¹, Masaki Imamura², Kazutoshi Takahashi², Hirofumi Ishii³, Yen-Fa Liao³, Yuji Inagaki⁴, Tatsuya Kawae⁴, Tetsuya Kida⁵, Masashi Nantoh⁶, Yoichi Ishiwata¹ (1.Saga Univ., 2.SLAC,Saga Univ., 3.NSRRC, 4.Kyusyu Univ,, 5.Kumamoto Univ., 6.RIKEN)

1:30 PM - 3:30 PM

[8p-PA1-9] Low-Temperature Fabrication Technologies for Resistive Nonvolatile Memory Diode

〇Akihiro Somura¹, Takahiro Tsukamoto¹, Itaru Kato², Akihiro Saiga², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.NIT, Tokyo College)

1:30 PM - 3:30 PM

[8p-PA1-10] Resistive Nonvolatile Memory using CuNiSi Oxide

〇Koki Nakayama¹, Takahiro Tsukamoto¹, Itaru Kato², Akihiro Saiga², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol, 2.NIT, Tokyo College)

1:30 PM - 3:30 PM

[8p-PA1-11] Activation Barrier Measurement of the Forming Process for an Ag/Ta₂O₅/Pt Device

〇(M1)Naoya Tanahashi¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[8p-PA1-12] Distribution of the switch-on resistances for Cu/Ta₂O₅/Pt devices with a series resistor

〇Yuki Shigeoka¹, Tsuyoshi Hasegawa¹, Tohru Tsuruoka² (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[8p-PA1-13] Study on an operating Mechanism of a Molecular-gap Atomic Switch

〇(B)Chisato Arima¹, Masato Araki¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[8p-PA1-14] Distribution of Switching-on Time of a Gapless Atomic Switch

〇Wataru Hiraya¹, Keita Ojima¹, Nozomi Mishima¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[8p-PA1-15] Switching characteristics of NiO nanowire resistive switching random access memory

〇Takashige Aono¹, Tadataka Watanabe², Yosiki Takano², Kouichi Takes² (1.Graduate Nihon Univ., 2.Nihon Univ.)

1:30 PM - 3:30 PM

[8p-PA1-16] Structural and Electrical Properties of Sc³⁺ or Fe³⁺-Doped TiO_2-_d Thin Films Prepared by Sputtering

Takuya Kawaguchi¹, Masaki Sekine¹, Makoto Minohara², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo. Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

△ [8p-PA1-17] Fabrications of transparent conducting oxide epitaxial thin films by mist CVD technique

〇Yasuyuki Niwa¹, Daisuke Kan¹, Yuichi Shimakawa¹ (1.ICR, Kyoto Univ.)

1:30 PM - 3:30 PM

△ [8p-PA1-18] Irradiation Effects of Excimer Light on Zinc Oxide Based Thin Films Grown by Vacuum and Non-Vacuum Processes

〇Sohei Matsuda¹, Koki Nagayama¹, Oliver Kaltstein¹, Fumiya Kimura¹, Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst of Tech. NMRC)

1:30 PM - 3:30 PM

[8p-PA1-19] Room temperature ferromagnetism in undoped ZnO powder

〇Kohei Takeda¹, Tadataka Watanabe², Yoshiki Takano², Kouichi Takase² (1.Graduate Nihon Univ., 2.Nihon Univ.)

1:30 PM - 3:30 PM

[8p-PA1-20] Reduction of contact resistance between Zinc Oxide and metal electrode using an electric double layer transistor

〇Tomoe Narita¹, Ryosuke Ishiguro¹, Hideaki Takayanagi² (1.Japan Women's Univ., 2.Tokyo University of Science.)

1:30 PM - 3:30 PM

[8p-PA1-21] Surface potential measurement on TiO₂ single crystals and nanoparticle thin films before and after ultraviolet illumination

〇Takuya Furukawa¹, Kei Noda¹ (1.Keio Univ)

1:30 PM - 3:30 PM

[8p-PA1-22] Application of WO₃ nanoparticles/ITO core-sheath nanofibers to photorechargeable battery electrodes

〇(M1C)Takuya Matsuda¹, Taito Kumamoto¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[8p-PA1-23] Fabrication of TiO₂ Films with Moleclular Precursor Solution by ESD Method Ⅱ

〇Ryuhei Ozawa¹, Yutaka Suwazono¹, Yukihiro Kudoh¹, Hiroki Nagai¹, Mitsunobu Sato¹, Taiju Takahashi¹ (1.Kogakuin univ.)

1:30 PM - 3:30 PM

△ [8p-PA1-24] Observation Rh valence state in Rh:SrTiO₃thin films

〇Yoshihisa Hosokawa¹, Takahashi Ryota^1,2, Kumigashira Hiroshi³, Lippmaa Mikk¹ (1.Univ. of Tokyo, ISSP, 2.JST PRESTO, 3.KEK-PF)

1:30 PM - 3:30 PM

[8p-PA1-25] Monolithic three-dimensional battery prepared by electrochemical deposition of conducting polymer onto inner surfaces of a mesoporous TiO₂

〇Kyohei Akiyoshi¹, Ryoichi Arima¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima Univ., 2.Takata Corp.)

1:30 PM - 3:30 PM

[8p-PA1-26] A study on growth of SnO₂thin films for metal separator of fuel cells

〇Masafumi Ono¹, Takashi Tanaka², Takayuki Uchida¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ., 2.EYETEC CO., LTD)

1:30 PM - 3:30 PM

△ [8p-PA1-27] Conducting layer thickness analysis in oxide heterostructures

〇JIYEON LEE¹, Ryota Takahashi^1,2, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo, 2.JST PRESTO)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[5p-A202-1~18] 6.3 Oxide electronics

△ [5p-A202-5] In-situ TEM observation of planer-type ReRAM of Ag/WOx/Pt

△ [5p-A202-8] Resistance Increase in Forming Process in Pt/TiO2/Pt Cells

△ [5p-A202-9] Micro Structure Analysis of Resistive Switching Regions in Rutile-TiO2 Single Crystal Memristors by TEM

△ [5p-A202-10] Non-Destructive Observation of Chemical State in ReRAMby Laser-excited Photoemission Electron Microscopy

△ [5p-A202-11] Resistive switching characteristics of four terminal TiO2 single crystal memristive devices

△ [5p-A202-12] Study on the effect of Hf oxide film sputtering conditionon resistive random access memory properties

△ [5p-A202-14] Investigations on Oxygen-Scavenging Effects ofInterfacial Metal Layers in Metal/Oxide Junctions

[6a-A202-1~10] 6.3 Oxide electronics

△ [6a-A202-2] Fabrication and magnetotransport properties of high mobility EuTiO3 quantum wells

△ [6a-A202-3] Ferromagnetism at the LaAlO3/SrTiO3 interface revealed by laser-excited photoelectron emission microscopy

△ [6a-A202-4] Grain Boundary Characteristics Dependence of Electric Field Induced Ion Dynamics in SrTiO3

△ [6a-A202-5] Electrochemical characterizations of ionic liquid / single-crystal ZnO interfaces

△ [6a-A202-6] Synthesis and orientation control of epitaxial LiNi1/3Mn1/3Co1/3O2 thin films using pulsed laser deposition

△ [6a-A202-8] Local Topotactic Reduction of SrFeO3 using Atomic Force Microscope

△ [6a-A202-9] Long-Term Stability of Oxide Nanowire Chemical Sensors by Metal Oxide Contact Layer

△ [6a-A202-10] Electron Transport Property Determined by Oxygen Partial Pressure in Single Crystalline Oxide Nanowires

[7a-A202-1~8] 6.3 Oxide electronics

▲ [7a-A202-4] Improvement of adhesion and rigidity of TiO2 thin film by laser radiation

▲ [7a-A202-7] Synthesis and Characterization of ZnO and Al-doped ZnO Nanostructures at Different Annealing Temperatures

[7p-A202-1~15] 6.3 Oxide electronics

△ [7p-A202-5] Anomalous Hall Effect in SrCoO3 thin films

△ [7p-A202-6] Growth and physical properties of La2VFeO6 double-perovskite films

△ [7p-A202-9] Superconductivity of LaO epitaxial thin film

△ [7p-A202-10] Anomalous behaviors in Hall resistivity of SrRuO3 thin films under compressive strain

△ [7p-A202-15] Electrolyte-gating-induced insulator-to-superconductor transition in electron-doped high-Tc cuprate superconductor La2-xCexCuO4

[8a-A202-1~11] 6.3 Oxide electronics

▲ [8a-A202-5] Improvement of Power Conversion Efficiency of Dye Sensitized Solar Cells by Depositing Light Scattering Layers of TiO2 by Electrophoresis

▲ [8a-A202-8] Research on fabrication and characterization of InFeO3 thin film for Photoelectrochemical electrode

[8p-PA1-1~27] 6.3 Oxide electronics

△ [8p-PA1-17] Fabrications of transparent conducting oxide epitaxial thin films by mist CVD technique

△ [8p-PA1-18] Irradiation Effects of Excimer Light on Zinc Oxide Based Thin Films Grown by Vacuum and Non-Vacuum Processes

△ [8p-PA1-24] Observation Rh valence state in Rh:SrTiO3 thin films

△ [8p-PA1-27] Conducting layer thickness analysis in oxide heterostructures

Authentication

△ [5p-A202-5] In-situ TEM observation of planer-type ReRAM of Ag/WO_x/Pt

△ [5p-A202-8] Resistance Increase in Forming Process in Pt/TiO₂/Pt Cells

△ [5p-A202-9] Micro Structure Analysis of Resistive Switching Regions in Rutile-TiO₂ Single Crystal Memristors by TEM

△ [5p-A202-10] Non-Destructive Observation of Chemical State in ReRAM
by Laser-excited Photoemission Electron Microscopy

△ [5p-A202-11] Resistive switching characteristics of four terminal TiO₂ single crystal memristive devices

△ [5p-A202-12] Study on the effect of Hf oxide film sputtering condition
on resistive random access memory properties

△ [5p-A202-14] Investigations on Oxygen-Scavenging Effects of
Interfacial Metal Layers in Metal/Oxide Junctions

△ [6a-A202-2] Fabrication and magnetotransport properties of high mobility EuTiO₃quantum wells

△ [6a-A202-3] Ferromagnetism at the LaAlO₃/SrTiO₃ interface revealed by laser-excited photoelectron emission microscopy

△ [6a-A202-4] Grain Boundary Characteristics Dependence of Electric Field Induced Ion Dynamics in SrTiO₃

△ [6a-A202-8] Local Topotactic Reduction of SrFeO₃ using Atomic Force Microscope

▲ [7a-A202-4] Improvement of adhesion and rigidity of TiO₂ thin film by laser radiation

△ [7p-A202-5] Anomalous Hall Effect in SrCoO₃ thin films

△ [7p-A202-6] Growth and physical properties of La₂VFeO₆ double-perovskite films

△ [7p-A202-10] Anomalous behaviors in Hall resistivity of SrRuO₃ thin films under compressive strain

△ [7p-A202-15] Electrolyte-gating-induced insulator-to-superconductor transition in electron-doped high-T_c cuprate superconductor La_2-xCe_xCuO₄

▲ [8a-A202-5] Improvement of Power Conversion Efficiency of Dye Sensitized Solar Cells by Depositing Light Scattering Layers of TiO₂ by Electrophoresis

▲ [8a-A202-8] Research on fabrication and characterization of InFeO₃ thin film for Photoelectrochemical electrode

△ [8p-PA1-24] Observation Rh valence state in Rh:SrTiO₃thin films